BZX55F6V2-TAP

BZX55C...
Vishay Semiconductors
Rev. 5, 12-Mar-01 1 (6)
www.vishay.com
Document Number 85605
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
94 9367
Order Instruction
Type Ordering Code Remarks
BZX55C2V4 BZX55C2V4–TAP Ammopack
Absolute Maximum Ratings
T
j
= 25 C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation l=4 mm, T
L
=25 C P
V
500 mW
Z–current I
Z
P
V
/V
Z
mA
Junction temperature T
j
175 C
Storage temperature range T
stg
–65...+175 C
Maximum Thermal Resistance
T
j
= 25 C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4 mm, T
L
=constant R
thJA
300 K/W
Electrical Characteristics
T
j
= 25 C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=200mA V
F
1.5 V
BZX55C...
Vishay Semiconductors
Rev. 5, 12-Mar-012 (6)
www.vishay.com Document Number 85509
Type V
Znom
I
ZT
for V
ZT
and r
zjT
r
zjk
at I
ZK
I
R
and I
R
at V
R
TK
VZ
BZX55C... V mA V
1)
mA A A
2)
V %/K
2V4 2.4 5 2.28 to 2.56 < 85 < 600 1 < 50 < 100 1 –0.09 to –0.06
2V7 2.7 5 2.5 to 2.9 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06
3V0 3.0 5 2.8 to 3.2 < 85 < 600 1 < 4 < 40 1 –0.08 to –0.05
3V3 3.3 5 3.1 to 3.5 < 85 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V6 3.6 5 3.4 to 3.8 < 85 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V9 3.9 5 3.7 to 4.1 < 85 < 600 1 < 2 < 40 1 –0.08 to –0.05
4V3 4.3 5 4.0 to 4.6 < 75 < 600 1 < 1 < 20 1 –0.06 to –0.03
4V7 4.7 5 4.4 to 5.0 < 60 < 600 1 < 0.5 < 10 1 –0.05 to +0.02
5V1 5.1 5 4.8 to 5.4 < 35 < 550 1 < 0.1 < 2 1 –0.02 to +0.02
5V6 5.6 5 5.2 to 6.0 <25 < 450 1 < 0.1 < 2 1 –0.05 to +0.05
6V2 6.2 5 5.8 to 6.6 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06
6V8 6.8 5 6.4 to 7.2 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07
7V5 7.5 5 7.0 to 7.9 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07
8V2 8.2 5 7.7 to 8.7 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08
9V1 9.1 5 8.5 to 9.6 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09
10 10 5 9.4 to 10.6 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1
11 11 5 10.4 to 11.6 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11
12 12 5 11.4 to 12.7 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11
13 13 5 12.4 to 14.1 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11
15 15 5 13.8 to 15.6 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.11
16 16 5 15.3 to 17.1 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11
18 18 5 16.8 to 19.1 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11
20 20 5 18.8 to 21.2 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11
22 22 5 20.8 to 23.3 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12
24 24 5 22.8 to 25.6 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0.12
27 27 5 25.1 to 28.9 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12
30 30 5 28 to 32 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12
33 33 5 31 to 35 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12
36 36 5 34 to 38 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12
39 39 2.5 37 to 41 < 90 < 500 0.5 < 0.1 < 5 30 0.04 to 0.12
43 43 2.5 40 to 46 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12
47 47 2.5 44 to 50 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12
51 51 2.5 48 to 54 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12
56 56 2.5 52 to 60 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12
62 62 2.5 58 to 66 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12
68 68 2.5 64 to 72 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12
75 75 2.5 70 to 79 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12
1)
Tighter tolerances available on request:
BZX55A... ± 1% of V
Znom
BZX55B... ± 2% of V
Znom
BZX55F... ± 3% of V
Znom
2)
at T
j
= 150 C
BZX55C...
Vishay Semiconductors
Rev. 5, 12-Mar-01 3 (6)
www.vishay.com
Document Number 85605
Characteristics (T
j
= 25 C unless otherwise specified)
95 9611
0 5 10 15
0
100
200
300
400
500
20
R – Therm. Resist. Junction / Ambient ( K/W )
thJA
l – Lead Length ( mm )
ll
T
L
=constant
Figure 1. Thermal Resistance vs. Lead Length
0 40 80 120 160
0
100
300
400
500
600
P – Total Power Dissipation ( mW )
tot
T
amb
– Ambient Temperature ( °C )
200
95 9602
200
Figure 2. Total Power Dissipation vs.
Ambient Temperature
0 5 10 15 20
1
10
100
1000
V – Voltage Change ( mV )
Z
V
Z
– Z-Voltage ( V )
25
95 9598
I
Z
=5mA
T
j
=25°C
Figure 3. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25 C
–60 0 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V – Relative Voltage Change
Ztn
T
j
– Junction Temperature ( °C )
240
95 9599
V
Ztn
=V
Zt
/V
Z
(25°C)
TK
VZ
=10 10
–4
/K
8 10
–4
/K
–4 10
–4
/K
6 10
–4
/K
4 10
–4
/K
2 10
–4
/K
–2 10
–4
/K
0
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
0102030
–5
0
5
10
15
TK – Temperature Coefficient of V ( 10 /K
)
VZ
V
Z
– Z-Voltage ( V )
50
95 9600
40
Z
–4
I
Z
=5mA
Figure 5. Temperature Coefficient of Vz vs. Z–Voltage
0 5 10 15
0
50
100
150
200
C – Diode Capacitance ( pF )
D
V
Z
– Z-Voltage ( V )
25
95 9601
20
T
j
=25°C
V
R
=2V
Figure 6. Diode Capacitance vs. Z–Voltage

BZX55F6V2-TAP

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Zener Diodes RECOMMENDED ALT 78-BZX55B6V2-TAP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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