Data Sheet D16777EJ1V0DS
5
2SK3793
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
0
50
100
150
200
250
-100 -50 0 50 100 150 200
Puls e d
10 V
V
GS
= 4.5 V
T
ch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
10
100
1000
10000
0.001 0.1 10 1000
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
0.1 1 10 100
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
Ω
t
d(off)
t
d(on)
t
t
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
20
40
60
80
100
120
0 5 10 15 20 25
0
2
4
6
8
10
12
I
D
= 12 A
V
DS
V
GS
V
DD
= 80 V
50 V
20 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
0.01
0.1
1
10
100
0 0.5 1 1.5
Pulsed
0 V
V
GS
= 10 V
4.5 V
V
F(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
1000
0.1 1 10 100
V
GS
= 0 V
di/dt =100 A/µs
IF - Diode Forward Current - A
