1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
MASW-002102-13580
MASW-003102-13590
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Parameter Absolute Maximum
Operating Temperature -65
o
C to +125
o
C
Storage Temperature -65
o
C to +150
o
C
Junction Temperature +175
o
C
Applied Reverse Voltage 50V
RF Incident Power +33dBm C.W.
Bias Current +25°C ±20mA
Max. operating conditions for a combination
of RF power, D.C. bias and temperature:
+33dBm CW @ 15mA (per diode) @+85°C
MASW-002102-13580
MASW-003102-13590
Features
Broad Bandwidth Specified up to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Rugged
Fully Monolithic
Glass Encapsulate Construction
RoHS Compliant* and 260°C Reflow Compatible
Description
The MASW-002102-13580 and MASW-003102-13590
devices are SP2T and SP3T broad band switches with
integrated bias networks utilizing M/A-COM Technology
Solutions HMIC
TM
(Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form
series and shunt diodes or vias by imbedding them in
low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass
gives HMIC devices low loss and high isolation per-
formance with exceptional repeatability through low
millimeter frequencies. Large bond pads facilitate the
use of low inductance ribbon bonds, while gold back-
side metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders
or electrically conductive silver epoxy.
Yellow areas denote wire bond pads
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
