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VND830ASPTR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27
VND830ASP-E Electrical specifications
Doc ID 17605 Rev 2 7/27
2.2 Thermal data
V
ESD
Electrostatic discharge (Human Body Model:
R=1.5Ω; C=100pF)
– INPUT
– CURRENT SENSE
–OUTPUT
–V
CC
4000
2000
5000
5000
V
V
V
V
E
MAX
Maximum switching energy
(L = 1.8 mH; R
L
=0Ω; V
bat
=13.5V;
T
jstart
= 150 °C; I
L
=9A)
100 mJ
P
tot
Power dissipation at T
c
=25°C 74 W
T
j
Junction operating temperature Internally limited °C
T
c
Case operating temperature -40 to 150 °C
T
STG
Storage temperature -55 to 150 °C
Table 2. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.3 °C/W
R
thj-amb
Thermal resistance junction-ambient 51.2
(1)
1. When mounted on a standard single sided FR-4 board with 0.5 cm
2
of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
°C/W
Electrical specifications VND830ASP-E
8/27 Doc ID 17605 Rev 2
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
CC
< 36 V; -40 °C < T
j
< 150 °C, unless
otherwise specified. (Per each channel).
Table 4. Power
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 5.5 13 36 V
V
USD
Undervoltage shutdown 3 4 5.5 V
V
OV
Overvoltage shutdown 36 V
R
ON
On-state resistance
I
OUT
=2A; T
j
=25°C 60 mΩ
I
OUT
=2A; T
j
=150°C 120 mΩ
V
clamp
Clamp voltage I
CC
=20mA
(1)
1. V
clamp
and V
OV
are correlated. Typical difference is 5 V.
41 48 55 V
I
S
Supply current
Off-state; V
CC
=13V;
V
IN
=V
OUT
=0V
12 40 µA
Off-state; V
CC
=13V;
V
IN
=V
OUT
=0V; T
j
=25°C
12 25 µA
On-state; V
IN
=5V; V
CC
=13V;
I
OUT
=0A; R
SENSE
=3.9kΩ
7mA
I
L(off1)
Off-state output current
V
IN
=V
OUT
=0V; V
CC
=36V;
T
j
= 125 °C
050µA
I
L(off2)
Off-state output current V
IN
=0V; V
OUT
=3.5V -75 0 µA
I
L(off3)
Off-state output current
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=125°C
5µA
I
L(off4)
Off-state output current
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=25°C
3µA
Table 5. Switching (V
CC
=13V)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
Turn-on delay time
R
L
=6.5Ω from V
IN
rising edge
to V
OUT
=1.3V
-30-µs
t
d(off)
Turn-on delay time
R
L
=6.5Ω from V
IN
falling
edge to V
OUT
=11.7V
-30-µs
(dV
OUT
/dt)
on
Turn-on voltage slope
R
L
=6.5Ω from V
OUT
=1.3V
to V
OUT
=10.4V
-
See
Figure 15
-V/µs
(dV
OUT
/dt)
off
Turn-off voltage slope
R
L
=6.5Ω from V
OUT
=11.7V
to V
OUT
=1.3V
-
See
Figure 16
-V/µs
VND830ASP-E Electrical specifications
Doc ID 17605 Rev 2 9/27
Table 6. Logic input (channel 1, 2)
Symbol Parameter Test conditions Min Typ Max Unit
V
IL
Input low level voltage 1.25 V
I
IL
Low level input current V
IN
=1.25V 1 µA
V
IH
Input high level voltage 3.25 V
I
IH
High level input current V
IN
= 3.25 V 10 µA
V
I(hyst)
Input hysteresis voltage 0.5 V
V
ICL
Input clamp voltage
I
IN
=1mA 6 6.8 8 V
I
IN
=-1mA -0.7 V
Table 7. V
CC
- output diode
Symbol Parameter Test conditions Min Typ Max Unit
V
F
Forward on voltage -I
OUT
=2A; T
j
= 150 °C - - 0.6 V
Table 8. Protection
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
lim
DC short circuit current
V
CC
=13V 6 9 15 A
5.5 V < V
CC
<36 V 15 A
T
TSD
Thermal shutdown
temperature
150 175 200 °C
T
R
Thermal reset temperature 135 °C
T
HYST
Thermal hysteresis 7 15 °C
V
demag
Turn-off output voltage
clamp
I
OUT
=2A; V
IN
=0V;
L=6mH
V
CC
-41 V
CC
-48 V
CC
-55 V
V
ON
Output voltage drop
limitation
I
OUT
=10mA 50 mV
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27

VND830ASPTR-E

Mfr. #:
Buy VND830ASPTR-E
Manufacturer:
STMicroelectronics
Description:
Solid State Relays - PCB Mount Double Channel High
Lifecycle:
New from this manufacturer.
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