OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STPS16H100CG-TR

P1-P3P4-P6P7-P9P10-P10
April 2015
DocID8734 Rev 3
1/10
This is information on a product in full production.
www.st.com
STPS16H100C
High voltage power Schottky rectifier
Datasheet - production data
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Avalanche capability specified
ECOPACK
®
2 compliant component for
D²PAK on demand
Description
Dual center tap Schottky rectifier designed for
high frequency miniature switch mode power
supplies such as adaptors and on-board DC-DC
converters.
Table 1: Device summary
Symbol
I
F(AV)
2x 8 A
V
RRM
100 V
T
j
(max)
175 °C
V
F
(typ)
0.59 V
K
K
A1
A1
A2
A2
D
2
PAK
A1
K
A2
Characteristics
STPS16H100C
2/10
DocID8734 Rev 3
1 Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
Forward rms current
30
A
I
F(AV)
Average forward current δ = 0.5,
square wave
T
C
= 165 °C
Per diode
8
A
T
C
= 160 °C
Per device
16
I
FSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
200
A
P
ARM
Repetitive peak avalanche power
tp = 10 µs, T
j
= 125 °C
625
W
T
stg
Storage temperature range
-65 to + 175
°C
T
j
Maximum operating junction temperature
(1)
+ 175
°C
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameter
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
1.6
°C/W
Total
1.1
R
th(c)
Coupling
0.6
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 4: Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
3.6
µA
T
j
= 125 °C
-
1.6
5
mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 8 A
-
0.77
V
T
j
= 125 °C
-
0.59
0.64
T
j
= 25 °C
I
F
= 16 A
-
0.88
T
j
= 125 °C
-
0.67
0.73
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.55 x I
F(AV)
+ 0.011 I
F
2
(RMS)
STPS16H100C
Characteristics
DocID8734 Rev 3
3/10
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average
current (per diode)
Figure 2: Average forward current versus ambient
temperature (δ= 0.5 per diode)
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj= 125 °C)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values per diode)
Figure 6: Junction capacitances versus reverse
voltage applied (typical values per diode)
0
1
2
3
4
5
6
7
012 34567 8 9 10
I (A)F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
P (W)F(AV)
T
δ
=tp/T
tp
0
1
2
3
4
5
6
7
8
9
0 25 50 75 100 125 150 175
T (°C)amb
Rth
(j-a)
=Rth
(j-c)
Rth
(j-a)
=50°C/W
I (A)F(AV)
T
δ
=tp/T
tp
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)P
Zth(j-c) / Rth(j-c)
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 10 20 30 40 50 60 70 80 90 100
V (V)R
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=100°C
T
j
=75°C
T
j
=50°C
I (mA)R
0.01
0.10
1.00
001011
V (V)R
F=1MHz
V
osc
=30mV
T
j
=25°C
C(nF)
P1-P3P4-P6P7-P9P10-P10

STPS16H100CG-TR

Mfr. #:
Buy STPS16H100CG-TR
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 2X8 Amp 100 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet