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NLAS7222AMUTAG

P1-P3P4-P6P7-P9P10-P11
Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1 Publication Order Number:
NLAS7222A/D
NLAS7222A
High-Speed USB 2.0
(480 Mbps) DPDT Switch
ON Semiconductor’s NLAS7222A series of analog switch circuits
are produced using the company’s advanced sub−micron CMOS
technology, achieving industry−leading performance.
The NLAS7222A is a 2− to 1−port analog switch. Its wide
bandwidth and low bit−to−bit skew allow it to pass high−speed
differential signals with good signal integrity. The switch is
bidirectional and offers little or no attenuation of the high−speed
signals at the outputs. Industry−leading advantages include a
propagation delay of less than 250 ps, resulting from its low channel
resistance and low I/O capacitance. Its high channel−to−channel
crosstalk rejection results in minimal noise interference. Its bandwidth
is wide enough to pass High−Speed USB 2.0 differential signals
(480 Mb/s).
Features
R
ON
is Typically 6.5 at V
CC
= 3 V
Low Bit−to−Bit Skew: Typically 50 ps
OVT on D+ and D− up to 3.6 V
Power OFF Protection:
When V
CC
= 0 V, D+ and D− Can Tolerate up to 3.6 V
Low Crosstalk: −45 dB @ 250 MHz
Low Current Consumption: 1 A
Near−Zero Propagation Delay: 250 ps
Channel On−Capacitance: 6.5 pF (Typical)
V
CC
Operating Range: +3.0 V to +3.6 V
> 700 MHz Bandwidth (or Data Frequency)
This is a Pb−Free Device
Typical Applications
Differential Signal Data Routing
USB 2.0 Signal Routing
Important Information
Continuous Current Rating Through Each Switch 50 mA
8 kV I/O to GND ESD Protection
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING
DIAGRAM
XX = Specific Device Code
XX = 2A or Y
M
= Date Code
G = Pb−Free Device
WQFN10
CASE 488AQ
1
Y M G
G
1
UQFN10
CASE 488AT
(Note: Microdot may be in either location)
2A M
G
G
NLAS7222A
http://onsemi.com
2
Figure 1. Pin Connections and Logic Diagram
(Top View)
8
9
10
12
76
5
4
3
HSD1+
HSD2+
HSD1− HSD2−
D−
GND
D+
OE
V
CC
S
CONTROL
Table 1. PIN DESCRIPTION
Pin Function
S Select Input
OE Output Enable
HSD1+, HSD1−, HSD2+,
HSD2−, D+, D−
Data Ports
Table 2. TRUTH TABLE
OE S
HSD1+,
HSD1−
HSD2+,
HSD2−
1
0
0
X
0
1
OFF
ON
OFF
OFF
OFF
ON
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage −0.5 to +4.6 V
V
IS
Analog Switch Input Voltage
HSD1+, HSD1−, HSD2+, HSD2−
D+, D−
−0.5 to V
CC
+ 0.3
−0.5 to +4.6
V
V
IN
Digital Select Input Voltage −0.5 to +4.6 V
I
D
Continuous DC Current (Through Analog Switch) 50 mA
P
D
Power Dissipation 0.5 W
T
S
Storage Temperature −65 to +150 C
ESD Human Body Model
I/O to GND
All Pins
8.0
1.5
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 3.0 3.6 V
V
IS
Analog I/O Voltage (HSD1+, HSD1−, HSD2+, HSD2−) GND V
CC
V
V
OS
Analog Common Output Voltage (D+, D−) GND 3.6 V
V
IN
Digital Select Input Voltage GND V
CC
V
T
A
Operating Temperature Range −40 +85 C
t
r
, t
f
Input Rise or Fall Time
V
CC
= 3.3 V 0.3 V 0 15
ns
NLAS7222A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS FOR USB 2.0 SWITCHING OVER OPERATIONAL RANGE
Symbol Parameter Test Conditions V
CC
(V)
−40C to +85C
Unit
Min
Typ
(Note 1)
Max
V
IH
Input HIGH Voltage (V
IN
) 3.0 to 3.6 1.3 − − V
V
IL
Input LOW Voltage (V
IN
) 3.0 to 3.6 − − 0.5 V
V
IK
Clamp Diode Voltage I
IS
= −18 mA 3.0 − − −1.2 V
I
CC
Quiescent Supply Current V
IS
= V
CC
or GND; I
D
= 0 A 3.6 − − 1.0
A
I
CCT
Increase in I
CC
per
Control Voltage
V
IN
= 2.6 V 3.6 − − 10.0
A
I
I
Input Leakage Current 0 V
IS
V
CC
3.6 − − 1.0
A
I
OZ
OFF State Leakage 0 V
IS;
V
OS
V
CC
3.6 − − 1.0
A
I
OFF
Power OFF Leakage Current
(D+, D−)
0 V
IS;
V
OS
V
CC
0 − − 1.0
A
R
ON
Switch On−Resistance V
IS
= 0 to 0.4 V; I
D
= 8 mA 3.0 − 6.5 9.0
R
FLAT(ON)
On−Resistance Flatness V
IS
= 0 to 1.0 V; I
D
= 8 mA 3.0 − 2.0 −
R
ON
On−Resistance match from
center ports to any other ports
V
IS
= 0 to 0.4 V; I
D
= 8 mA 3.0 − 0.35 −
1. Typical values are at V
CC
= 3.3 V and T
A
= +25C
AC ELECTRICAL CHARACTERISTICS
−405C to +855C
Symbol Parameter Test Conditions V
CC
(V) Min
Typ
(Note 2)
Max Unit
t
ON
Turn−ON Time V
IS
= 0.8 V 3.0 to 3.6 − 13.0 30.0 ns
t
OFF
Turn−OFF Time V
IS
= 0.8 V 3.0 to 3.6 − 12.0 25.0 ns
t
BBM
Break−Before−Make Delay V
IS
= 0.8 V 3.0 to 3.6 2.0 4.7 6.5 ns
t
PD
Propagation Delay C
L
= 10 pF 3.0 to 3.6 − 0.25 − ns
O
IRR
OFF−Isolation
f = 250 MHz; R
L
= 50
3.0 to 3.6 − −28 − dB
X
TALK
Non−Adjacent Channel Crosstalk
f = 250 MHz; R
L
= 50
3.0 to 3.6 − −45 − dB
BW −3 dB Bandwidth
R
L
= 50 ; C
L
= 0 pF
3.0 to 3.6
− 700 − MHz
R
L
= 50 ; C
L
= 5 pF
− 500 −
AC ELECTRICAL CHARACTERISTICS FOR USB 2.0 SWITCHING OVER OPERATIONAL RANGE
t
SK(O)
Channel−to−Channel Skew C
L
= 10 pF 3.0 to 3.6 − 0.05 − ns
T
JITTER
Total Jitter
R
L
= 50 ; C
L
= 10 pF
t
r
= t
f
= 500 ps at 480 Mbps
3.0 to 3.6 − 0.2 − ns
2. Typical values are at V
CC
= 3.3 V and T
A
= +25C
CAPACITANCE
−405C to +855C
Symbol
Parameter Test Conditions Min
Typ
(Note 3)
Max Unit
C
IN
Control Pin Input Capacitance V
CC
= 0 V − 2.5 − pF
C
ON
HSD+, HSD− ON Capacitance V
CC
= 3.3 V; OE = 0 V − 7.0 − pF
C
OFF
HSD+, HSD− OFF Capacitance V
CC
= V
IS
= 3.3 V; OE = 3.3 V − 4.5 − pF
3. Typical values are at V
CC
= 3.3 V and T
A
= +25C
P1-P3P4-P6P7-P9P10-P11

NLAS7222AMUTAG

Mfr. #:
Buy NLAS7222AMUTAG
Manufacturer:
ON Semiconductor
Description:
USB Switch ICs USB 2.0 ANALOG SWITCH DPDT
Lifecycle:
New from this manufacturer.
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