DF2S6M4SL
1
ESD Protection Diodes Silicon Epitaxial Planar
DF2S6M4SL
DF2S6M4SL
DF2S6M4SL
DF2S6M4SL
Start of commercial production
2016-03
1.
1.
1.
1. Applications
Applications
Applications
Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2.
2.
2.
2. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
1: Cathode
2: Anode
3.
3.
3.
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Electrostatic discharge voltage (IEC61000-4-2)(Air)
Peak pulse power (tp = 8/20 µs)
Peak pulse current (tp = 8/20 µs)
Junction temperature
Storage temperature
Symbol
V
ESD
P
PK
I
PP
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
±20
30
2
150
-55 to 150
Unit
kV
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
2016-03-25
Rev.1.0
©2016 Toshiba Corporation
