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PMEG40T20EPX

P1-P3P4-P6P7-P9P10-P12P13-P14
Nexperia
PMEG40T20EP
40 V, 2 A low VF Trench MEGA Schottky barrier rectifier
PMEG40T20EP All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 29 September 2017 4 / 14
aaa-027097
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.25
0.05
0.02
0.01
duty cycle = 1
0.75
0.33
0.20
0.50
0.10
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-027098
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.10
0.20
0.25
0.33
0.50
0.75
duty cycle = 1
FR4 PCB, mounting pad for cathode 1 cm
2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PMEG40T20EP
40 V, 2 A low VF Trench MEGA Schottky barrier rectifier
PMEG40T20EP All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 29 September 2017 5 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 1 mA; T
j
= 25 °C; pulsed [1] 40 - - V
I
F
= 0.1 A; T
j
= 25 °C; pulsed [1] - 310 360 mV
I
F
= 0.5 A; T
j
= 25 °C; pulsed [1] - 365 420 mV
I
F
= 1 A; T
j
= 25 °C; pulsed [1] - 400 460 mV
I
F
= 2 A; T
j
= 25 °C; pulsed [1] - 445 515 mV
I
F
= 2 A; T
j
= -40 °C; pulsed [1] - 505 - mV
V
F
forward voltage
I
F
= 2 A; T
j
= 125 °C; pulsed [1] - 365 - mV
V
R
= 10 V; T
j
= 25 °C; pulsed [1] - 3 11.5 µA
V
R
= 30 V; T
j
= 25 °C; pulsed [1] - 5 - µA
V
R
= 40 V; T
j
= 25 °C; pulsed [1] - 6 22 µA
I
R
reverse current
V
R
= 40 V; T
j
= 125 °C; pulsed [1] - 4 - mA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 355 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 150 - pF
reverse recovery time
step recovery
I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 11.5 - nst
rr
reverse recovery time
ramp recovery
dI
F
/dt = 200 A/µs; T
j
= 25 °C; I
F
= 6 A;
V
R
= 26 V
- 10.5 - ns
V
FRM
peak forward recovery
voltage
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C - 430 - mV
[1] Very short pulse, in order to maintain a stable junction temperature.
Nexperia
PMEG40T20EP
40 V, 2 A low VF Trench MEGA Schottky barrier rectifier
PMEG40T20EP All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 29 September 2017 6 / 14
aaa-027286
10
-2
10
-1
1
10
I
F
(A)
10
-3
V
F
(V)
0 1.00.80.4 0.60.2
(1)
(3)
(2)
(4)
(5) (6) (7)
pulsed condition
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 100 °C
(5) T
j
= 85 °C
(6) T
j
= 25 °C
(7) T
j
= -40 °C
Fig. 3. Forward current as a function of forward
voltage; typical values
aaa-027100
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
I
R
(A)
10
-10
V
R
(V)
0 403010 20
(1)
(3)
(4)
(5)
(6)
(2)
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 100 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 4. Reverse current as a function of reverse
voltage; typical values
V
R
(V)
0 403010 20
aaa-027101
200
400
600
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values
I
F(AV)
(A)
0 321
aaa-027102
0.5
1.0
1.5
P
F(AV)
(W)
0
(1)
(3)
(2)
(4)
(5)
T
j
= 100 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1; DC
Fig. 6. Average forward power dissipation as a
function of average forward current; typical
values
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PMEG40T20EPX

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Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers PMEG40T20EP/SOD128/F
Lifecycle:
New from this manufacturer.
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