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PBSS301PD,115

P1-P3P4-P6P7-P9P10-P12P13-P15
PBSS301PD_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 17 December 2007 3 of 14
NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
[1] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width t
p
≤ 10 ms.
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, mounting pad for collector 1 cm
2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
(1)
T
amb
(°C)
−75 17512525 75−25
006aaa270
800
400
1200
1600
P
tot
(mW)
0
(2)
(4)
(3)
PBSS301PD_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 17 December 2007 4 of 14
NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width t
p
≤ 10 ms.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 350 K/W
[2]
- - 208 K/W
[3]
- - 167 K/W
[4]
- - 113 K/W
[1][5]
- - 50 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 45 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa271
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS301PD_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 17 December 2007 5 of 14
NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa272
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa273
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
P1-P3P4-P6P7-P9P10-P12P13-P15

PBSS301PD,115

Mfr. #:
Buy PBSS301PD,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP 20V 4A LOW SAT
Lifecycle:
New from this manufacturer.
Delivery:
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