PMEG4010ER_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 15 April 2010 9 of 14
NXP Semiconductors
PMEG4010ER
1 A low V
F
MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: with I
M
defined as peak current,
at DC, and with I
RMS
defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
I
FAV()
I
M
δ×=
RMS
I
FAV()
=
I
RMS
I
M
δ×=
Fig 14. Package outline SOD123W
08-11-06Dimensions in mm
2.8
2.4
3.7
3.3
1.05
0.75
1.9
1.5
1
2
0.6
0.3
0.22
0.10
1.1
0.9
