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CDBQR0230L

P1-P3P4-P4
CDBQR0230L
Page 1
QW-A1118
REV:C
Comchip Technology CO., LTD.
uA
V
30
0.5
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
C
O
C
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
mW
125
PD
Power Dissipation
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
0402/SOD-923F
SMD Schottky Barrier Diode
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BA
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Io = 200 mA
VR = 30 Volts
RoHS Device
RATING AND CHARACTERISTIC CURVES (CDBQR0230L)
Page 2
QW-A1118
REV:C
Comchip Technology CO., LTD.
0 1510 20
1
10
100
5
25
30
Capacitance between terminals (PF)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
f = 1 MHz
Ta = 25
C
1u
10n
10u
100n
0 10 20 25
30
1m
100u
15
5
Reverse voltage (V)
Fig. 2 - Reverse characteristics
Reverse current ( A )
O
25 C
O
75 C
O
-25 C
0.2 0.40
1
100
0.5
0
0.8
1000
0.6
0.3
0.1 0.7
10
Forward current (mA )
Forward voltage (V)
Fig. 1 - Forward characteristics
Forward voltage (mV)
430
400
440
420
450
410
AVG:4 21.28mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
Reverse current (uA)
30
0
40
20
50
10
AVG:4 .1 816uA
5
15
25
35
45
Fig. 6 - IR Dispersion map
Capacitance between
terminals(pF)
26
20
28
24
30
22
AVG:2 2.8 pF
21
23
25
27
29
Fig. 7 - CT Dispersion map
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
O
Ta=25 C
VR=10V
n=30pcs
0
20
40
60
80
100
0 25 50
75
100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
O
-
25
C
O
2
5
C
O
7
5
C
O
1
2
5
C
150
SMD Schottky Barrier Diode
Page 3
QW-A1118
REV:C
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
B
C
d
D D
2
D
1
E F P P
0
P
1
T
SYMBOL
A
W W
1
(mm)
(inch)
0.026 0.004± 0.045 0.004± 0.024 0.004± 0.061 + 0.004
7.008 0.04±
2.362 MIN.
0.512 0.008±
SYMBOL
(mm)
(inch)
0.069 0.004± 0.138 0.002±
0.157 0.004± 0.157 0.004±
0.079 0.004± 0.009 0.002± 0.315 0.008±
0.531 MAX.
0.75 0.10±
1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05±
8.00 0.20±
13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
Reel Taping Specification
o
1
2
0
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End
Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B
W
P
P0
P1
A
Polarity
P1-P3P4-P4

CDBQR0230L

Mfr. #:
Buy CDBQR0230L
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers LOW VF DFN 200mA,30V Sm. Sgnl. Schottky
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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