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SI3909DV-T1-E3

P1-P3P4-P6
Vishay Siliconix
Si3909DV
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.200 at V
GS
= - 4.5 V
± 1.8
0.235 at V
GS
= - 3.6 V
± 1.6
0.340 at V
GS
= - 2.5 V
± 1.3
TSOP-6
To p V iew
6
4
1
2
3
5
2.85 mm
3 mm
D2G2
S1S2
D1G1
Ordering Information: Si3909DV-T1-E3 (Lead (Pb)-free)
Si3909DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
± 1.8
A
T
A
= 70 °C
± 1.2
Pulsed Drain Current
I
DM
± 7
Continuous Diode Current (Diode Conduction)
a, b
I
S
- 1.05
Maximum Power Dissipation
a, b
T
A
= 25 °C
P
D
1.15
W
T
A
= 70 °C
0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
93 110
°C/W
Steady State 130 150
Maximum Junction-to-Lead Steady State
R
thJL
75 90
www.vishay.com
2
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
Vishay Siliconix
Si3909DV
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
- 1
µA
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 55 °C
- 5
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 1.8 A
0.160 0.200
Ω
V
GS
= - 3.6 V, I
D
= - 1.6 A
0.190 0.235
V
GS
= - 2.5 V, I
D
= - 1 A
0.280 0.340
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 1.8 A
3.6 S
Diode Forward Voltage
a
V
SD
I
S
= - 1.05 A, V
GS
= 0 V
- 0.83 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.8 A
2.7 4.0
nCGate-Source Charge
Q
gs
0.4
Gate-Drain Charge
Q
gd
0.6
Tur n-On D elay T ime
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
11 17
ns
Rise Time
t
r
34 50
Turn-Off Delay Time
t
d(off)
19 30
Fall Time
t
f
24 36
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.05 A, dI/dt = 100 A/µs
20 40
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
3
Vishay Siliconix
Si3909DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
012345
V
GS
=
4.5 V thru 4 V
1.5
V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2.5 V
3 V
3.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
01234567
V
GS
= 4.5 V
V
GS
= 2.5 V
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 3.6
V
- On-Resistance (Ω)
0
0.9
1.8
2.7
3.6
4.5
0 0.6 1.2 1.8 2.4 3.0
V
DS
= 10 V
I
D
= 1.8 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= - 55 °C
125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
25 °C
0
90
180
270
360
450
048121620
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 1.8 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
P1-P3P4-P6

SI3909DV-T1-E3

Mfr. #:
Buy SI3909DV-T1-E3
Manufacturer:
Vishay
Description:
MOSFET 2P-CH 20V 6TSOP
Lifecycle:
New from this manufacturer.
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