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IXFT86N30T

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH86N30T
IXFT86N30T
Fig. 7. Input Admittance
0
20
40
60
80
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 43A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
R
DS(
on
)
Limit
100m
© 2014 IXYS CORPORATION, All Rights Reserved
IXFH86N30T
IXFT86N30T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
8
10
12
14
16
18
20
22
24
26
40 45 50 55 60 65 70 75 80 85 90
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 150V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
40
80
120
160
200
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 150V
I
D
= 86A
I
D
= 43A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
13
15
17
19
21
23
25
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
55
60
65
70
75
80
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 150V
I
D
= 43A
I
D
= 86A
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
8
10
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 150V
I
D
= 86A
I
D
= 43A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
12
14
16
18
20
22
24
26
28
40 45 50 55 60 65 70 75 80 85 90
I
D
- Amperes
t
f
- Nanoseconds
45
50
55
60
65
70
75
80
85
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 150V
T
J
= 25ºC
T
J
= 125ºC
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
40
80
120
160
200
240
280
320
360
400
24681012141618
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
350
400
450
500
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 150V
I
D
= 86A
I
D
= 43A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH86N30T
IXFT86N30T
IXYS REF: F_86N30T(8W-N32) 3-21-14
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXFT86N30T

Mfr. #:
Buy IXFT86N30T
Manufacturer:
Littelfuse
Description:
MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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