SiHG47N60E
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Vishay Siliconix
S16-0233-Rev. M, 15-Feb-16
2
Document Number: 91474
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-40
°C/W
Maximum Junction-to-Case (Drain)
R
thJC
-0.33
SPECIFICATIONS(T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - - V
V
DS
Temperature Coefficient
V
DS
/T
J
Reference to 25 °C, I
D
= 250 μA
-0.66-
V/°C
Gate-Source Threshold Voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
V
GS
= ± 30 V - - ± 1 μA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 1
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 24 A - 0.053 0.064
Forward Transconductance g
fs
V
DS
= 8 V, I
D
= 3 A - 6.8 - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
2405 4810 9620
pF
Output Capacitance C
oss
115 230 460
Reverse Transfer Capacitance C
rss
1.7 5 10
Effective Output Capacitance, Energy
Related
a
C
o(er)
V
DS
= 0 V to 480 V, V
GS
= 0 V
- 170 -
Effective Output Capacitance, Time
Related
b
C
o(tr)
- 604 -
Total Gate Charge Q
g
V
GS
= 10 V I
D
= 24 A, V
DS
= 480 V
74 148 220
nC Gate-Source Charge Q
gs
14.5 29 58
Gate-Drain Charge Q
gd
28.5 57 86
Turn-On Delay Time t
d(on)
V
DD
= 480 V, I
D
= 24 A,
V
GS
= 10 V, R
g
= 4.4
14 28 56
ns
Rise Time t
r
36 72 108
Turn-Off Delay Time t
d(off)
47 93 140
Fall Time t
f
41 82 123
Gate Input Resistance R
g
f = 1 MHz, open drain 0.13 0.65 1.3
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--47
A
Pulsed Diode Forward Current I
SM
--140
Diode Forward Voltage V
SD
T
J
= 25 °C, I
S
= 24 A, V
GS
= 0 V - - 1.2 V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= I
S
= 24 A,
dI/dt = 100 A/μs, V
R
= 25 V
- 582 1164 ns
Body Diode Reverse Recovery Charge Q
rr
-1122μC
Reverse Recovery Current I
RRM
-3162A
