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VS-8ETL06FP-N3

P1-P3P4-P6P7-P7
VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-17
1
Document Number: 96429
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL pending
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
R
600 V
V
F
at I
F
1.3 V
t
rr
typ. 18 ns
T
J
max. 175 °C
Package 2L TO-220 FullPAK
Circuit configuration Single
2L TO-220 FullPAK
2
1
V
S-8ETH06FP-N3
2
Anode
1
Cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 108 °C 8
ANon-repetitive peak surge current I
FSM
100
Repetitive peak forward current I
FM
16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 8 A - 2.0 2.4
I
F
= 8 A, T
J
= 150 °C - 1.3 1.8
Reverse leakage current I
R
V
R
= V
R
rated - 0.3 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 55 500
Junction capacitance C
T
V
R
= 600 V - 17 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-17
2
Document Number: 96429
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 18 22
ns
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 20 25
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-25-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.4 -
A
T
J
= 125 °C - 4.8 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 25 -
nC
T
J
= 125 °C - 120 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
-33-ns
Peak recovery current I
RRM
-12- A
Reverse recovery charge Q
rr
- 220 - nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction-to-case
R
thJC
-3.44.3°C/W
Thermal resistance,
junction-to-ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case-to-heatsink
R
thCS
Mounting surface, flat, smooth, and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220 FullPAK 8ETH06FP
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
01
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
23
4
0.1
0.01
0.1
1
10
100
0 200 400
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
300
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
0.001
1000
600500
VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-17
3
Document Number: 96429
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
100
1000
0 200 400 500 600
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
T
J
= 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
10 100
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
02 6 10 14
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
80
100
48
120
140
160
180
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
12
02 6 1012
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
4
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
48
8
12
16
20
18
14
10
6
2
P1-P3P4-P6P7-P7

VS-8ETL06FP-N3

Mfr. #:
Buy VS-8ETL06FP-N3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Freds - FULLPAK-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
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