© 2006 IXYS CORPORATION All rights reserved
IXTH240N055T
IXTQ240N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
33
36
39
42
45
48
51
54
57
60
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
34
38
42
46
50
54
58
62
66
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
25A
I
D
= 50A
25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
58
60
62
64
66
68
70
72
74
76
78
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
60
64
68
72
76
80
84
88
92
96
100
t
d ( o f f )
- Nanosecond
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 30V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
58
60
62
64
66
68
70
72
74
76
78
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
60
64
68
72
76
80
84
88
92
96
100
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC, 125ºC
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
30
33
36
39
42
45
48
51
54
57
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
50
75
100
125
150
175
200
225
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
60
100
140
180
220
260
300
340
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
IXYS REF: T_240N055T (61) 11-16-06-B.xls
