SI4941EDY-T1-E3 Datasheet SI4941EDY-T1-E3 | P1-P3

Vishay Siliconix

Si4941EDY

New Product

Document Number: 74248

S-72693-Rev. B, 24-Dec-07

www.vishay.com

1

Dual P-Channel 30-V (D-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET

• ESD Protection: 2500 V

APPLICATIONS

• Load Switch for Portable Devices

• Battery and Load Switching for Notebooks

PRODUCT SUMMARY

V

DS

(V) r

DS(on)

(Ω)I

D

(A) Q

g

(Typ)

- 30

0.021 at V

GS

= - 10 V

- 10

a

26 nC

0.031 at V

GS

= - 4.5 V

- 10

a

D

S

G

7 kΩ

D

S

G

7 kΩ

1

2

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top V ie w

2

3

4

1

Ordering Information: Si4941EDY-T1-E3 (Lead (Pb)-free)

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 10

a

A

T

C

= 70 °C

- 8.8

T

A

= 25 °C

- 8.3

b, c

T

A

= 70 °C

- 6.6

b, c

Pulsed Drain Current

I

DM

- 30

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 3

T

A

= 25 °C

- 1.7

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

3.6

W

T

C

= 70 °C

2.3

T

A

= 25 °C

2

b, c

T

A

= 70 °C

1.3

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, c

t ≤ 10 s R

thJA

45 62.5

°C/W

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

26 35

RoHS

COMPLIANT

www.vishay.com

2

Document Number: 74248

S-72693-Rev. B, 24-Dec-07

Vishay Siliconix

Si4941EDY

New Product

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 30 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= - 250 µA

- 33

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

4.2

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1.2 - 2.8 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 10 V

± 20 µA

V

DS

= 0 V, V

GS

= ± 20 V

± 1 mA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V

- 1

µA

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 10 V

- 30 A

Drain-Source On-State Resistance

a

r

DS(on)

V

GS

= - 10 V, I

D

= - 8.3 A

0.017 0.021

Ω

V

GS

= - 4.5 V, I

D

= - 6.8 A

0.025 0.031

Forward Transconductance

a

g

fs

V

DS

= - 15 V, I

D

= - 8.3 A

26 S

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 8.3 A

46 70

nC

V

DS

= - 15 V, V

GS

= - 4.5 V, I

D

= - 8.3 A

26 39

Gate-Source Charge

Q

gs

6.7

Gate-Drain Charge

Q

gd

14

Gate Resistance

R

g

f = 1 MHz 7.3 kΩ

Turn-on Delay Time

t

d(on)

V

DD

= - 15 V, R

L

= 2.3 Ω

I

D

≅ - 6.6 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

16 24

µs

Rise Time

t

r

60 90

Turn-Off Delay Time

t

d(off)

11 17

Fall Time

t

f

24 36

Turn-on Delay Time

t

d(on)

V

DD

= - 15 V, R

L

= 2.3 Ω

I

D

≅ - 6.6 A, V

GEN

= - 10 V, R

g

= 1 Ω

5.5 9

Rise Time

t

r

11 20

Turn-Off Delay Time

t

d(off)

30 45

Fall Time

t

f

24 40

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 10

A

Pulse Diode Forward Current

I

SM

30

Body Diode Voltage

V

SD

I

S

= - 2.1 A, V

GS

= 0 V

- 0.83 - 1.2 V

Document Number: 74248

S-72693-Rev. B, 24-Dec-07

www.vishay.com

3

Vishay Siliconix

Si4941EDY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

On-Resistance vs. Junction Temperature

0

6

12

18

24

30

012345

V

GS

= 10 thru 4 V

V

DS

- Drain-to-Source Voltage (V)

)

A

(

t

n e r r

u

C n

i

a r D -

I

D

3 V

(Ω) ecnatsiseR-nO -r

)no(SD

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0

.

040

0 6 12 18 24 30

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0.6

0.8

1.0

1.2

1

.

4

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 8.3 A

T

J

- Junction Temperature (°C)

) d e z i l a m

r

o N (

e c n a t s i s

e

R - n O - r

) n o ( S D

Transfer Characteristics

Gate Charge

Source-Drain Diode Forward Voltage

0

6

12

18

24

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

T

C

= 125 °C

- 55 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

)

A

(

t

n

e

r

r u

C

n

i a

r

D

-

I

D

0

2

4

6

8

10

)

V

(

ega

tlo

V

e

c

ruoS

-o

t-

eta

G

-

Q

g

- Total Gate Charge (nC)

V

SG

I

D

= 8.3 A

V

DS

= 15 V

I

D

= 8.3 A

V

DS

= 24 V

50 40

30

20

10

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

T

J

= 150 °C

40

10

1

V

SD

- Source-to-Drain Voltage (V)

) A ( t

n e r r

u C

e c

r

u

o S

-

I

S

T

J

= 25 °C

SI4941EDY-T1-E3

SI4941EDY-T1-E3

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