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GBUE2560-M3/P

P1-P3P4-P5
GBUE2560
www.vishay.com
Vishay General Semiconductor
Revision: 18-Oct-17
1
Document Number: 87633
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low V
F
Single-Phase Single In-Line Bridge Rectifier
FEATURES
• UL recognition file number E312394
• Oxide planar chip junction
• Low forward voltage drop
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home applications, and
white-goods applications specially or telecom power
supply, high efficiency desktop PC and server SMPS.
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1)
Unit case mounted on aIuminum plate heatsink
(2)
Units mounted on PCB without heatsink
PRIMARY CHARACTERISTICS
I
F(AV)
25 A
V
RRM
600 V
I
FSM
350 A
V
F
at I
F
= 12.5 A (125 °C) 0.75 V
T
J
max. 175 °C
Package GBU
Circuit configuration In-line
Case Style GBU
- ~ ~ +
Case
Style GBU
+
~
~
-
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GBUE2560 UNIT
Device marking code GBUE2560
Maximum repetitive peak reverse voltage V
RRM
600 V
Maximum RMS voltage V
RMS
420 V
Maximum DC blocking voltage V
DC
600 V
Maximum average forward rectified output current at
T
C
= 140 °C I
O
(1)
25
A
T
A
= 25 °C I
O
(2)
4.9
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
I
FSM
350 A
Rating for fusing (t < 8.3 ms) I
2
t 508 A
2
s
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
GBUE2560
www.vishay.com
Vishay General Semiconductor
Revision: 18-Oct-17
2
Document Number: 87633
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
Notes
(1)
Without heatsink, free air
(2)
With heatsink
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage drop
per diode
I
F
= 12.5 A
T
A
= 25 °C
V
F
(1)
0.88 0.92
V
T
A
= 125 °C 0.75 -
Maximum DC reverse current at rated DC
blocking voltage per diode
V
R
= 600 V
T
A
= 25 °C
I
R
(2)
0.1 10
µA
T
A
= 125 °C 27 -
Typical reverse recovery time I
F
= 0.5 A, I
R
=1.0 A, I
rr
= 0.25 A t
rr
280 - ns
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
240 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GBUE2560 UNIT
Typical thermal resistance
R
θJA
(1)
23
°C/W
R
θJC
(2)
1.2
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBUE2560-M3/P 3.83 P 20 Tube
0
5
10
15
20
25
30
0 255075100125150175
Average Forward Output Current (A)
Case Temperature (°C)
T
C
measured at device bottom
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
02468101214
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
GBUE2560
www.vishay.com
Vishay General Semiconductor
Revision: 18-Oct-17
3
Document Number: 87633
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Fig. 7 - Peak Forward Surge Current
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 25 °C
T
J
= 175 °C
T
J
= 75 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 100 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (˩A)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 100 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= -40 °C
1
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction to Ambient
0
100
200
300
400
110100
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
8.3 ms single half sine-wave
P1-P3P4-P5

GBUE2560-M3/P

Mfr. #:
Buy GBUE2560-M3/P
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 600V Vrrm; 25A If Case Style GBU
Lifecycle:
New from this manufacturer.
Delivery:
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