BYT53D-TR

BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Sep-12
1
Document Number: 86030
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Very fast rectification and switches
Switched mode power supplies
High-frequency inverter circuits
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYT53G BYT53G-TR 5000 per 10" tape and reel 25 000
BYT53G BYT53G-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYT53A V
R
= 50 V; I
F(AV)
= 1.9 A SOD-57
BYT53B V
R
= 100 V; I
F(AV)
= 1.9 A SOD-57
BYT53C V
R
= 150 V; I
F(AV)
= 1.9 A SOD-57
BYT53D V
R
= 200 V; I
F(AV)
= 1.9 A SOD-57
BYT53F V
R
= 300 V; I
F(AV)
= 1.9 A SOD-57
BYT53G V
R
= 400 V; I
F(AV)
= 1.9 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYT53A V
R
= V
RRM
50 V
BYT53B V
R
= V
RRM
100 V
BYT53C V
R
= V
RRM
150 V
BYT53D V
R
= V
RRM
200 V
BYT53F V
R
= V
RRM
300 V
BYT53G V
R
= V
RRM
400 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
50 A
Average forward current l = 10 mm, T
L
= 25 °C I
F(AV)
1.9 A
Non repetitive reverse avalanche energy I
(BR)R
= 1 A E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Sep-12
2
Document Number: 86030
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 A V
F
--1.1V
I
F
= 1 A, T
j
= 175 °C V
F
--0.9V
Reverse current
V
R
= V
RRM
I
R
--5μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 200 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 50 ns
0
20
40
80
60
100
120
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949552
ll
T
L
= constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
V
F
- Forward Voltage (V)
16333
T
j
= 175 °C
T
j
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 20 40 60 80 100 120 140 160 180
T
amb
- Junction Temperature (°C)
16334
I
FAV
- Average Forward Current (A)
VR = V
RRM
half sine wave
R
thJA
= 45 K/W
l = 10 mm
PCB: d = 25 mm
R
thJA
= 100 K/W
1
10
100
1000
25 50 75 100 125 150 175
16335
V
R
= V
RRM
I
R
- Reverse Current (μA)
T
j
- Junction Temperature (°C)
BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Sep-12
3
Document Number: 86030
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
20
40
60
80
100
120
140
160
180
200
220
16336
V
R
= V
RRM
P
R
- Reverse Power Dissipation (mW)
P
R
- Limit
at 100 % V
R
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
P
R
- Limit
at 80 % V
R
0
10
20
30
40
50
60
0.1 1 10 100
V
R
- Reverse Voltage (V)
16337
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.

BYT53D-TR

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.4 Amp 200 Volt 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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