MBD770DWT1G

© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 2
1 Publication Order Number:
MBD770DW/D
MBD770DWT1G,
NSVMBD770DW1T1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
J
= 150°C unless otherwise noted)
Rating
Symbol Value Unit
Forward Current I
F
100 mA
Non−Repetitive Peak Forward Surge
Current (60 Hz Half Sine)
I
FSM
1 A
Reverse Voltage V
R
70 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C (Note 1)
P
F
380
3
mW
mW/°C
Operating Junction and Storage
Temperature Range
T
J,
T
stg
55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR4 @ 100 mm
2
, 1 oz Cu
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING
DIAGRAM
SOT−363
CASE 419B
STYLE 6
www.onsemi.com
70 VOLTS SCHOTTKY
BARRIER DIODES
Anode 1 6 Cathode
Cathode 3 4 Anode
N/C 2 5 N/C
H5 MG
G
1
6
Device Package Shipping
ORDERING INFORMATION
MBD770DWT1G SOT−363
(Pb−Free)
3000 /
Tape & Ree
l
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
NSVMBD770DW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Ree
l
1
MBD770DWT1G, NSVMBD770DW1T1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
70
V
Total Capacitance
(V
R
= 20 V, f = 1.0 MHz)
C
T
1.0
pF
Reverse Leakage
(V
R
= 35 V)
I
R
200
nA
Forward Voltage
(I
F
= 1.0 mA)
V
F
500
mV
Forward Voltage
(I
F
= 10 mA)
V
F
1.0
V
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
−55°C
75°C
125°C
150°C
100°C
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
I
F
, FORWARD CURRENT (mA)
01020304050607080
100000
10000
1000
100
10
1
0.1
0.01
I
R
, REVERSE CURRENT (nA)
150°C
125°C
100°C
75°C
25°C
−40°C
C
T
, TOTAL CAPACITANCE (pF)
0102030405060
1.4
1.2
1
0.8
0.6
0.4
0.2
0
T
A
= 25°C
f = 1 MHz
25°C
MBD770DWT1G, NSVMBD770DW1T1G
www.onsemi.com
3
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd
M
123
A1
A
c
654
E
b
6X
DIM MIN NOM MAX
MILLIMETERS
A −− −− 1.10
A1 0.00 −−− 0.10
ddd
b 0.15 0.20 0.25
C 0.08 0.15 0.22
D 1.80 2.00 2.20
−− −− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb
H
B
SEATING
PLANE
DETAIL A
E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc
C
A2
6X
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P
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Phone: 81−3−5817−1050
MBD770DW/D
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Sales Representative

MBD770DWT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 70V 120mW Dual Isolated
Lifecycle:
New from this manufacturer.
Delivery:
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