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HUFA75332S3S

P1-P3P4-P6P7-P9P10-P10
©2002 Fairchild Semiconductor Corporation HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A
PSPICE Electrical Model
.SUBCKT HUFA75332 2 1 3 ; rev 18 June 2002
CA 12 8 1.8e-9
CB 15 14 1.73e-9
CIN 6 8 1.19e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 58.85
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1e-9
LSOURCE 3 7 1e-9
K1 LSOURCE LGATE 0.0085
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 4.5e-3
RGATE 9 20 1.3
RLDRAIN 2 5 10
RLGATE 1 9 10
RLSOURCE 3 7 10
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.95e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),4.6))}
.MODEL DBODYMOD D (IS = 1.3e-12 RS = 3.0e-3 IKF = 20 XTI = 6 TRS1 = 2.7e-3 TRS2 = 7.0e-7 CJO = 1.7e-9 TT = 4.0e-8 M = 0.45 vj = 0.75)
.MODEL DBREAKMOD D (RS = 1.71e-2 IKF = 1.0e-5 TRS1 = -4.0e-4 TRS2 = -1.55e-5)
.MODEL DPLCAPMOD D (CJO = 1.8e-9 IS = 1e-30 N = 1 M = 0.9 vj = 1.45)
.MODEL MMEDMOD NMOS (VTO = 3.183 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.3)
.MODEL MSTROMOD NMOS (VTO = 3.66 KP = 51.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.703 KP = 0.008 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 13)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = 4.5e-7)
.MODEL RDRAINMOD RES (TC1 = 1.16e-2 TC2 = 1.7e-5)
.MODEL RSLCMOD RES (TC1 = 3.96e-3 TC2 = 2.7e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-5)
.MODEL RVTHRESMOD RES (TC1 = -2.8e-3 TC2 = -1.0e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e-3 TC2 = 5.0e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8 VOFF= -3)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -8)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
HUFA75332G3, HUFA75332P3, HUFA75332S3S
©2002 Fairchild Semiconductor Corporation HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A
SABER Electrical Model
REV 18 June 2002
template hufa75332 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.3e-12, xti = 6, cjo = 1.7e-9, tt = 4.0e-8, m = 0.45, vj = 0.75)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 1.8e-9, is = 1e-30, m = 0.9, vj = 1.45)
m..model mmedmod = (type=_n, vto = 3.183, kp = 2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.66, kp = 51.5, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.703, kp = 8.0e-3, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8, voff = -3)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3, voff = -8)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = 0)
c.ca n12 n8 = 1.8e-9
c.cb n15 n14 = 1.73e-9
c.cin n6 n8 = 1.19e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.0e-9
l.lgate n1 n9 = 1.0e-9
l.lsource n3 n7 = 1.0e-9
k.kl i (l.lgate) i (l.lsource) = l (l.lgate), l (l.lsource), 0.0085
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = 4.5e-7
res.rdbody n71 n5 = 3.0e-3, tc1 = 2.7e-3, tc2 = 7.0e-7
res.rdbreak n72 n5 = 1.71e-2, tc1 = -4.0e-4, tc2 = -1.55e-5
res.rdrain n50 n16 = 4.5e-3, tc1 = 1.16e-2, tc2 = 1.7e-5
res.rgate n9 n20 = 1.3
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 10
res.rlsource n3 n7 = 10
res.rslc1 n5 n51 = 1e-6, tc1 = 3.96e-3, tc2 = 2.7e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.95e-3, tc1 = 1e-3, tc2 = 1e-5
res.rvtemp n18 n19 = 1, tc1 = -2.75e-3, tc2 = 5.0e-7
res.rvthres n22 n8 = 1, tc1 = -2.8e-3, tc2 = -1.0e-5
spe.ebreak n11 n7 n17 n18 = 58.85
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/180))** 4.6))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
RDBODY
RDBREAK
72
71
HUFA75332G3, HUFA75332P3, HUFA75332S3S
©2002 Fairchild Semiconductor Corporation HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A
SPICE Thermal Model
REV 18June 2002
HUFA75332
CTHERM1 th 6 4.00e-3
CTHERM2 6 5 7.00e-3
CTHERM3 5 4 7.50e-3
CTHERM4 4 3 8.00e-3
CTHERM5 3 2 1.85e-2
CTHERM6 2 tl 12.55
RTHERM1 th 6 7.09e-3
RTHERM2 6 5 1.77e-2
RTHERM3 5 4 4.97e-2
RTHERM4 4 3 2.79e-1
RTHERM5 3 2 4.21e-1
RTHERM6 2 tl 5.58e-2
SABER Thermal Model
SABER thermal model HUFA75332
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.00e-3
ctherm.ctherm2 6 5 = 7.00e-3
ctherm.ctherm3 5 4 = 7.50e-3
ctherm.ctherm4 4 3 = 8.00e-3
ctherm.ctherm5 3 2 = 1.85e-2
ctherm.ctherm6 2 tl = 12.55
rtherm.rtherm1 th 6 = 7.09e-3
rtherm.rtherm2 6 5 = 1.77e-2
rtherm.rtherm3 5 4 = 4.97e-2
rtherm.rtherm4 4 3 = 2.79e-1
rtherm.rtherm5 3 2 = 4.21e-1
rtherm.rtherm6 2 tl = 5.58e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUFA75332G3, HUFA75332P3, HUFA75332S3S
P1-P3P4-P6P7-P9P10-P10

HUFA75332S3S

Mfr. #:
Buy HUFA75332S3S
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 55V 60a 0.019 Ohm N-Channel
Lifecycle:
New from this manufacturer.
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