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CM200DU-12H

P1-P3P4-P4
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
SWITCHING TIMES
(
ns
)
COLLECTOR CURRENT I
C
(
A
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
TYPICAL
)
REVERSE RECOVERY TIME t
rr
(
ns
)
EMITTER CURRENT I
E
(
A
)
REVERSE RECOVERY CURRENT I
rr
(
A
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(
nC
)
TIME
(
s
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(
FWDi part
)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
d(off)
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
t
d(on)
t
f
t
r
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–di/dt = 400A/µs
T
j
= 25°C
t
rr
l
rr
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Per unit base = R
th(j – c)
= 0.19K/W
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Per unit base = R
th(j – c)
= 0.35K/W
0
5
10
15
20
0 100 200 300 400 500
600
V
CC
= 200V
V
CC
= 300V
I
C
= 200A
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(
IGBT part
)
TIME
(
s
)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
P1-P3P4-P4

CM200DU-12H

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Description:
IGBT MOD DUAL 600V 200A U SER
Lifecycle:
New from this manufacturer.
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