UPA814T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
• SMALL PACKAGE STYLE:
2 NE688 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: f
T = 9 GHz
• HIGH COLLECTOR CURRENT: 100 mA
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
DESCRIPTION
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 9
VCEO Collector to Emitter Voltage V 6
VEBO Emitter to Base Voltage V 2
IC Collector Current mA 100
PT Total Power Dissipation
1 Die mW 110
2 Die mW 200
TJ Junction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PART NUMBER UPA814T
PACKAGE OUTLINE S06
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBO Collector Cutoff Current at VCB = 5V, IE = 0 µA 0.1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1
hFE
1
Forward Current Gain at VCE = 1 V, IC = 3 mA 80 110 160
fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9.0
Cre
2
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 0.85
|S21E|
2
Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5
NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5
hFE1/hFE2 hFE Ratio: 0.85
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
California Eastern Laboratories
hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
0.15
0.9 ± 0.1
0.7
2.0 ± 0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
