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EL5220TIYZ-T7

P1-P3P4-P6P7-P9P10-P12P13-P15
EL5220T
4
FN6892.0
May 4, 2010
DYNAMIC PERFORMANCE
SR Slew Rate (Note 9) -4.0V ≤ V
OUTx
≤ +4.0V, 20% to 80% 12 V/μs
t
S
Settling to +0.1% (Note 10) A
V
= +1, V
OUTx
= 2V step,
R
L
= 10kΩ, C
L
= 8pF
500 ns
BW -3dB Bandwidth R
L
= 10kΩ, C
L
= 8pF 12 MHz
GBWP Gain-Bandwidth Product A
V
= -50, R
F
= 5kΩ, R
G
= 100Ω
R
L
= 10kΩ, C
L
= 8pF
8 MHz
PM Phase Margin A
V
= -50, R
F
= 5kΩ, R
G
= 100Ω
R
L
= 10kΩ, C
L
= 8pF
50 °
CS Channel Separation f = 5MHz 85 dB
Electrical Specifications V
S
+
= +5V, V
S
-
= -5V, R
L
= 10kΩ to 0V, T
A
= +25°C, unless otherwise specified. (Continued)
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
Electrical Specifications V
S
+
= +5V, V
S
-
= 0V, R
L
= 10kΩ to 2.5V, T
A
= +25°C, unless otherwise specified.
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage V
CM
= 2.5V 3 18 mV
TCV
OS
Average Offset Voltage Drift (Note 8) 8 Ld MSOP package 5 μV/°C
8 Ld DFN package 3 μV/°C
I
B
Input Bias Current V
CM
= 2.5V 2 50 nA
R
IN
Input Impedance 1GΩ
C
IN
Input Capacitance 2pF
CMIR Common-Mode Input Range -0.5 +5.5 V
CMRR Common-Mode Rejection Ratio For V
INx
from -0.5V to +5.5V 45 70 dB
A
VOL
Open Loop Gain 0.5V ≤ V
OUTx
≤ + 4.5V 75 105 dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low I
L
= -2.5mA 30 150 mV
V
OH
Output Swing High I
L
= +2.5mA 4.85 4.97 V
I
SC
Short Circuit Current V
CM
= 2.5V, Source: V
OUTx
short to V
S
-,
Sink: V
OUTx
short to V
S
+
±125 mA
I
OUT
Output Current ±65 mA
POWER SUPPLY PERFORMANCE
(V
S
+) - (V
S
-) Supply Voltage Range 4.5 19 V
I
S
Supply Current (Per Amplifier) V
CM
= 2.5V, No load 550 750 μA
PSRR Power Supply Rejection Ratio Supply is moved from 4.5V to 19V 60 75 dB
DYNAMIC PERFORMANCE
SR Slew Rate (Note 9) 1V ≤ V
OUTx
≤ 4V, 20% to 80% 12 V/μs
t
S
Settling to +0.1% (Note 10) A
V
= +1, V
OUTx
= 2V step,
R
L
= 10kΩ, C
L
= 8pF
500 ns
BW -3dB Bandwidth R
L
= 10kΩ, C
L
= 8pF 12 MHz
GBWP Gain-Bandwidth Product A
V
= -50, R
F
= 5kΩ, R
G
= 100Ω
R
L
= 10kΩ, C
L
= 8pF
8 MHz
PM Phase Margin A
V
= -50, R
F
= 5kΩ, R
G
= 100Ω
R
L
= 10kΩ, C
L
= 8pF
50 °
CS Channel Separation f = 5MHz 85 dB
EL5220T
5
FN6892.0
May 4, 2010
Electrical Specifications V
S
+
= +18V, V
S
-
= 0V, R
L
= 10kΩ to 9V, T
A
= +25°C, unless otherwise specified.
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
INPUT CHARACTERISTICS
V
OS
Input Offset Voltage V
CM
= 9V 5 18 mV
TCV
OS
Average Offset Voltage Drift (Note 8) 8 Ld MSOP package 6 μV/°C
8 Ld DFN package 4 μV/°C
I
B
Input Bias Current V
CM
= 9V 2 50 nA
R
IN
Input Impedance 1GΩ
C
IN
Input Capacitance 2pF
CMIR Common-Mode Input Range -0.5 +18.5 V
CMRR Common-Mode Rejection Ratio For V
INx
from -0.5V to +18.5V 53 78 dB
A
VOL
Open Loop Gain 0.5V ≤ V
OUTx
≤ 17.5V 75 90 dB
OUTPUT CHARACTERISTICS
V
OL
Output Swing Low I
L
= -9mA 120 150 mV
V
OH
Output Swing High I
L
= +9mA 17.85 17.88 V
I
SC
Short Circuit Current V
CM
= 9V, Source: V
OUTx
short to V
S
-,
Sink: V
OUTx
short to V
S
+
±200 mA
I
OUT
Output Current ±65 mA
POWER SUPPLY PERFORMANCE
(V
S
+) - (V
S
-) Supply Voltage Range 4.5 19 V
I
S
Supply Current (Per Amplifier) V
CM
= 9V, No load 650 850 μA
PSRR Power Supply Rejection Ratio Supply is moved from 4.5V to 19V 60 75 dB
DYNAMIC PERFORMANCE
SR Slew Rate (Note 9) 1V ≤ V
OUTx
≤ 17V, 20% to 80% 12 V/μs
t
S
Settling to +0.1% (Note 10) A
V
= +1, V
OUTx
= 2V step,
R
L
= 10kΩ, C
L
= 8pF
500 ns
BW -3dB Bandwidth R
L
= 10kΩ, C
L
= 8pF 12 MHz
GBWP Gain-Bandwidth Product A
V
= -50, R
F
= 5kΩ, R
G
= 100Ω
R
L
= 10kΩ, C
L
= 8pF
8 MHz
PM Phase Margin A
V
= -50, R
F
= 5kΩ, R
G
= 100Ω
R
L
= 10kΩ, C
L
= 8pF
50 °
CS Channel Separation f = 5MHz 85 dB
NOTES:
8. Measured over -40°C to +85°C ambient operating temperature range. See the typical TCV
OS
production distribution shown in
the “Typical Performance Curves” on page 6.
9. Typical slew rate is an average of the slew rates measured on the rising (20% to 80%) and the falling (80% to 20%) edges of
the output signal.
10. Settling time measured as the time from when the output level crosses the final value on rising/falling edge to when the output
level settles within a ±0.1% error band. The range of the error band is determined by: Final Value(V) ± [Full Scale(V) * 0.1%]
EL5220T
6
FN6892.0
May 4, 2010
Typical Performance Curves
FIGURE 3. INPUT OFFSET VOLTAGE DISTRIBUTION FIGURE 4. INPUT OFFSET VOLTAGE DRIFT (MSOP)
FIGURE 5. INPUT OFFSET VOLTAGE DRIFT (DFN) FIGURE 6. INPUT OFFSET VOLTAGE vs TEMPERATURE
FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE FIGURE 8. OUTPUT HIGH VOLTAGE vs TEMPERATURE
0
100
200
300
400
500
-10 -8 -6 -4 -2 0 4 6 10
INPUT OFFSET VOLTAGE (mV)
QUANTITY (AMPLIFIERS)
V
S
= ±5V
T
A
= +25°C
TYPICAL
PRODUCTION
DISTRIBUTION
28
0
2
4
6
8
10
12
14
16
18
2 4 6 8 101214161820222426 28
INPUT OFFSET VOLTAGE DRIFT (| μV |/°C)
TYPICAL
PRODUCTION
DISTRIBUTION
V
S
= ±5V
-40°C TO +85°C
QUANTITY (AMPLIFIERS)
0
2
4
6
8
10
12
14
16
18
15911131517
INPUT OFFSET VOLTAGE DRIFT (mV)
QUANTITY (AMPLIFIERS)
TYPICAL
PRODUCTION
DISTRIBUTION
V
S
= ±5V
-40°C TO +85°C
37
0.0
2.5
5.0
7.5
10.0
-50 0 50 100 150
TEMPERATURE (°C)
INPUT OFFSET VOLTAGE (mV)
V
S
= ±5V
-1
0
1
2
3
4
5
-50 0 50 100 150
INPUT BIAS CURRENT (nA)
V
S
= ±5V
TEMPERATURE (°C)
4.92
4.93
4.94
4.95
4.96
-50 0 50 100 150
OUTPUT HIGH VOLTAGE (V)
TEMPERATURE (°C)
V
S
= ±5V
I
OUT
= 5mA
P1-P3P4-P6P7-P9P10-P12P13-P15

EL5220TIYZ-T7

Mfr. #:
Buy EL5220TIYZ-T7
Manufacturer:
Renesas / Intersil
Description:
Operational Amplifiers - Op Amps EL5220TIYZ 12MHZ R2R INPUT-OUTPUT OPERATE
Lifecycle:
New from this manufacturer.
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