SIA429DJT-T1-GE3 Datasheet SIA429DJT-T1-GE3 | P1-P3

Vishay Siliconix

SiA429DJT

Document Number: 67038

S11-0649-Rev. B, 11-Apr-11

www.vishay.com

1

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• New Thermally Enhanced PowerPAK

®

SC-70 Package

- Small Footprint Area

- Ultra-Thin 0.6 mm height

- Low On-Resistance

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch and Charger Switch for Portable Devices

• DC/DC Converter

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(A) Q

g

(Typ.)

- 20

0.0205 at V

GS

= - 4.5 V

- 12

a

24.5 nC

0.027 at V

GS

= - 2.5 V

- 12

a

0.036 at V

GS

= - 1.8 V

- 12

a

0.060 at V

GS

= - 1.5 V

- 4

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

Thin PowerPAK SC-70-6L-Single

2.05 mm

0.6 mm

6

5

4

D

S

3

2

1

G

D

S

Marking Code

X X X

B P X

Lot traceability

and Date code

Part # code

Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

- 20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 12

a

A

T

C

= 70 °C

- 12

a

T

A

= 25 °C

- 10.6

b, c

T

A

= 70 °C

- 8.5

b, c

Pulsed Drain Current (t = 300 µs) I

DM

- 30

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 12

a

T

A

= 25 °C

- 2.9

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

19

W

T

C

= 70 °C 12

T

A

= 25 °C

3.5

b, c

T

A

= 70 °C

2.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s

R

thJA

28 36

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

5.3 6.5

www.vishay.com

2

Document Number: 67038

S11-0649-Rev. B, 11-Apr-11

Vishay Siliconix

SiA429DJT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 20 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= - 250 µA

- 12

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

2.7

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.4 - 1 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 20 V, V

GS

= 0 V

- 1

µA

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

- 5 V, V

GS

= - 4.5 V

- 20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 6 A

0.0170 0.0205



V

GS

= - 2.5 V, I

D

= - 2 A

0.022 0.027

V

GS

= - 1.8 V, I

D

= - 2 A

0.029 0.036

V

GS

= - 1.5 V, I

D

= - 1 A

0.038 0.060

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 6 A

30 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

1750

pFOutput Capacitance

C

oss

270

Reverse Transfer Capacitance

C

rss

240

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 8 V, I

D

= - 10 A

41 62

nC

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 10 A

24.5 37

Gate-Source Charge

Q

gs

2.4

Gate-Drain Charge

Q

gd

6.7

Gate Resistance

R

g

f = 1 MHz 1.3 6.3 13 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 10 V, R

L

= 1.2 

I

D

 - 8.5 A, V

GEN

= - 4.5 V, R

g

= 1 

22 35

ns

Rise Time

t

r

25 40

Turn-Off Delay Time

t

d(off)

70 105

Fall Time

t

f

25 40

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= - 10 V, R

L

= 1.2 

I

D

 - 8.5 A, V

GEN

= - 8 V, R

g

= 1 

10 15

Rise Time

t

r

10 15

Turn-Off Delay Time

t

d(off)

80 120

Fall Time

t

f

25 40

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 12

A

Pulse Diode Forward Current

I

SM

- 30

Body Diode Voltage

V

SD

I

S

= - 8.5 A, V

GS

= 0 V

- 0.8 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 8.5 A, dI/dt = 100 A/µs, T

J

= 25 °C

35 60 ns

Body Diode Reverse Recovery Charge

Q

rr

18 30 nC

Reverse Recovery Fall Time

t

a

13

ns

Reverse Recovery Rise Time

t

b

22

Document Number: 67038

S11-0649-Rev. B, 11-Apr-11

www.vishay.com

3

Vishay Siliconix

SiA429DJT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

25

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

=5Vthru2V

V

GS

=1V

V

GS

=1.5V

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0 5 10 15 20 25 30

V

GS

=4.5V

V

GS

=1.5V

V

GS

=1.8V

V

GS

=2.5V

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

0

2

4

6

8

0 1020304050

I

D

=10A

V

DS

=5V

V

DS

=10V

V

DS

=16V

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0 0.4 0.8 1.2 1.6 2.0

T

C

= 125 °C

T

C

= 25 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

C

rss

0

500

1000

1500

2000

2500

3000

3500

0 5 10 15 20

C

iss

C

oss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.65

0.85

1.05

1.25

1.45

1.65

- 50 - 25 0 25 50 75 100 125 150

V

GS

=1.8V;I

D

=6A

V

GS

=4.5V;2.5V;I

D

=6A

V

GS

=1.5V;I

D

=1A

T

J

- Junction Temperature (°C)

(Normalized)

R

DS(on)

- On-Resistance

SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

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