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NTS4172NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 0
1 Publication Order Number:
NTS4172N/D
NTS4172N
Power MOSFET
30 V, 1.7 A, Single N−Channel, SC−70
Features
• Low On−Resistance
• Low Gate Threshold Voltage
• Halide Free
• This is a Pb−Free Device
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
• Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
1.6
A
T
A
= 85°C 1.13
t ≤ 5 s T
A
= 25°C 1.70
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.294
W
t ≤ 5 s 0.350
Pulsed Drain Current
t
p
=10 ms
I
DM
3.4 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
0.25 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
425
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
R
q
JA
360
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
G
D
S
Device Package Shipping
†
ORDERING INFORMATION
http://onsemi.com
30 V 100 mW @ 4.5 V
93 mW @ 10 V
R
DS(on)
MAX
1.7 A
I
D
MAXV
(BR)DSS
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM/
PIN ASSIGNMENT
2
1
3
SC−70/SOT−323 (3 LEADS)
NTS4172NT1G SC−70
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
140 mW @ 2.5 V
TF = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
TFMG
G
1
Gate
2
Source
3 Drain
* Date code orientation may vary depending upon
manufacturing location
1.5 A
1.0 A
NTS4172N
http://onsemi.com
2
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, Reference to 25°C
8.4 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V, T
J
= 25°C
V
GS
= 0 V, V
DS
= 24 V, T
J
= 125°C
1.0
5.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "12 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.6 1.0 1.4 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
3.1 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 1.7 A 58 93 mW
V
GS
= 4.5 V, I
D
= 1.5 A 64 100
V
GS
= 2.5 V, I
D
= 1.0 A 79 140
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 1.7 A 4.2 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
381
pF
Output Capacitance C
oss
39.6
Reverse Transfer Capacitance C
rss
32.6
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 1.7 A
4.38
nC
Threshold Gate Charge Q
G(TH)
0.40
Gate−to−Source Charge Q
GS
0.62
Gate−to−Drain Charge Q
GD
1.33
Gate Resistance R
G
4.5
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 1.7 A, R
G
= 3 W
7.5
ns
Rise Time t
r
4.4
Turn−Off Delay Time t
d(off)
16.1
Fall Time t
f
2.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 1.0 A 0.76 1.0 V
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 1.0 A,
dI
SD
/d
t
= 100 A/ms
7.9
ns
Charge Time t
a
5.0
Discharge Time t
b
2.9
Reverse Recovery Charge Q
RR
2.0 nC
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
NTS4172N
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
0.5
1.0
1.5
2.0
2.5
0.0 2.01.61.00.80.6
0
0.5
1.0
1.5
2.0
2.5
3.5
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
1054321
0.02
0.04
0.06
0.10
2.01.51.00.5
0
0.01
0.02
0.03
0.05
0.06
0.07
0.08
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.8
1.0
1.2
1.4
1.6
252015105
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 1.4 V
1.5 V
1.6 V
2.0 V
2.5 V
10 V
4.5 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
V
DS
≥ 10 V
0.08
0.12
I
D
= 1.7 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
I
D
= 1.7 A
V
GS
= 10 V
150 30
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
1.7 V
1.8 V
T
J
= 25°C
3.0
1.2 1.4 1.8 2.2
6789
V
GS
= 10 V
0.2 0.4
0.09
0.10
P1-P3P4-P5

NTS4172NT1G

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Buy NTS4172NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SC70 30V TR 0.085R
Lifecycle:
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