ADM202E/ADM1181A
Rev. C | Page 10 of 16
ESD TESTING (IEC1000-4-2)
IEC1000-4-2 (previously 801-2) specifies compliance testing
using two coupling methods, contact discharge and air-gap
discharge. Contact discharge calls for a direct connection to the
unit being tested. Air-gap discharge uses a higher test voltage,
but does not make direct contact with the unit being tested.
With air-gap discharge, the discharge gun is moved toward the
unit being tested, developing an arc across the air gap. This
method is influenced by humidity, temperature, barometric
pressure, distance, and rate of closure of the discharge gun.
Although less realistic, the contact-discharge method is more
repeatable and is gaining preference to the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time coupled with high voltages can
cause failures in unprotected semiconductors. Catastrophic
destruction can occur immediately as a result of arcing or
heating. Even if catastrophic failure does not occur immediately,
the device might suffer from parametric degradation, which can
result in degraded performance. The cumulative effects of
continuous exposure can eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge, which can damage or completely destroy the
interface product connected to the I/O port. Traditional ESD
test methods, such as the MIL-STD-883B method 3015.7, do
not fully test a products susceptibility to this type of discharge.
This test was intended to test a product’s susceptibility to ESD
damage during handling. Each pin is tested with respect to all
other pins. There are some important differences between the
traditional test and the IEC test:
The IEC test is much more stringent in terms of discharge
energy. The injected peak current is over four times greater.
The current rise time is significantly faster in the IEC test.
The IEC test is carried out while power is applied to
the device.
It is possible that the ESD discharge could induce latch-up in the
device being tested. Therefore, this test is more representative of a
real-world I/O discharge where the equipment is operating
normally with power applied. For peace of mind, however, both
tests should be performed to ensure maximum protection
during both handling and field service.
R1 R2
C1
DEVICE
UNDER TEST
HIGH
VOLTAGE
GENERATOR
ESD TEST METHOD R2 C1
H. BODY MIL-STD883B 1.5k 100pF
IEC1000-4-2 330 150pF
00066-018
Figure 18. ESD Test Standards
100
I
PEAK
(%)
90
36.8
10
t
DL
t
RL
TIME t
00066-019
Figure 19. Human Body Model ESD Current Waveform
100
I
PEAK
(%)
90
10
TIME t
30ns
60ns
0.1 TO 1ns
00066-020
Figure 20. IEC1000-4-2 ESD Current Waveform
The ADM202E/ADM1181E products are tested using both of
the previously mentioned test methods. Pins are tested with
respect to all other pins as per the MIL-STD-883B specification.
In addition, I/O pins are tested as per the IEC test specification.
The products were tested under the following conditions:
Power-On
Power-Off
There are four levels of compliance defined by IEC1000-4-2. The
ADM202E/ADM1181A products meet the most stringent level
of compliance both for contact and for air-gap discharge. This
means that the products are able to withstand contact discharges
in excess of 8 kV and air-gap discharges in excess of 15 kV.
ADM202E/ADM1181A
Rev. C | Page 11 of 16
Table 4. IEC1000-4-2 Compliance Levels
Level Contact Discharge Air Discharge
1 2 kV 2 kV
2 4 kV 4 kV
3 6 kV 8 kV
4 8 kV 15 kV
Table 5. ADM202E/ADM1181A ESD Test Results
ESD Test Method I/O Pins
MIL-STD-883B ±15 kV
IEC1000-4-2
Contact ±8 kV
Air ±15 kV
FAST TRANSIENT/BURST TESTING (IEC1000-4-4)
IEC1000-4-4 (previously 801-4) covers electrical fast transient
(EFT)/burst immunity. Electrical fast transients occur as a result
of arcing contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
burst of sparks as the relay contacts separate. The voltage
appearing on the line, therefore, consists of a burst of extremely
fast transient impulses. A similar effect occurs when switching
on fluorescent lights.
The fast transient/burst test defined in IEC1000-4-4 simulates
this arcing, and its waveform is illustrated in Figure 17. It
consists of a burst of 2.5 kHz to 5 kHz transients repeating at
300 ms intervals. It is specified for both power and data lines.
300ms 15ms
t
V
5ns
0.2/0.4ms
50ns
V
t
00066-021
Figure 21. IEC1000-4-4 Fast Transient Waveform
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 22.
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp, which is 1 m long, completely
surrounds the cable, providing maximum coupling capacitance
(50 pF to 200 pF typ) between the clamp and the cable. High
energy transients are capacitively coupled to the signal lines.
Fast rise times (5 ns), as specified by the standard, result in very
effective coupling. This test is very strenuous because high voltages
are coupled onto the signal lines. The repetitive transients often
cause problems where single pulses do not. Destructive latch-up
can be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and transmitting data. The EFT test applies
hundreds of pulses with higher energy than ESD. Worst-case
transient current on an I/O line can be as high as 40 A.
R
C
R
M
C
C
HIGH
VOLTAGE
SOURCE
L
Z
S
C
D
50
OUTPUT
00066-022
Figure 22. IEC1000-4-4 Fast Transient Generator
Test results are classified according to the following:
Classification 1: Normal performance within specifi-
cation limits
Classification 2: Temporary degradation or loss of
performance that is self-recoverable
Classification 3: Temporary degradation or loss of function
or performance that requires operator intervention or
system reset
Classification 4: Degradation or loss of function that is not
recoverable due to damage
The ADM202E/ADM1181A meet Classification 2 and have
been tested under worst-case conditions using unshielded
cables. Data transmission during the transient condition is
corrupted, but can resume immediately following the EFT event
without user intervention.
ADM202E/ADM1181A
Rev. C | Page 12 of 16
IEC1000-4-3 RADIATED IMMUNITY
IEC1000-4-3 (previously IEC801-3) describes the measure-
ment method and defines the levels of immunity to radiated
electromagnetic fields. It was originally intended to simulate the
electromagnetic fields generated by portable radio transceivers
and other devices that generate continuous wave-radiated
electromagnetic energy. Its scope has since been broadened to
include spurious EM energy, which can be radiated from
fluorescent lights, thyristor drives, inductive loads, and
other sources.
Testing for immunity involves irradiating the device with an
EM field. There are various methods of achieving this, including
use of anechoic chamber, stripline cell, TEM cell, and GTEM
cell. A stripline cell consists of two parallel plates with an electric
field developed between them. The device being tested is placed
within the cell and exposed to the electric field. There are three
severity levels that have field strengths ranging from 1 V to
10 V/m. Results are classified in a similar fashion to those for
IEC1000-4-2.
Classification 1: Normal operation
Classification 2: Temporary degradation or loss of
function that is self-recoverable when the interfering
signal is removed
Classification 3: Temporary degradation or loss of function
that requires operator intervention or system reset when
the interfering signal is removed
Classification 4: Degradation or loss of function that is not
recoverable due to damage
The ADM202E/ADM1181A products easily meet Classification 1
at the most stringent (Level 3) requirement. In fact, field strengths
of up to 30 V/m showed no performance degradation, and error-
free data transmission continued even during irradiation.
Table 6. Test Severity Levels (IEC1000-4-3)
Level Field Strength V/m
1 1
2 3
3 10
EMISSIONS/INTERFERENCE
EN55 022 and CISPR22 define the permitted limits of radiated
and conducted interference from information technology (IT)
equipment. The objective of the standard is to minimize the
level of emissions, both conducted and radiated. For ease of
measurement and analysis, conducted emissions are assumed to
predominate below 30 MHz, and radiated emissions are
assumed to predominate above 30 MHz.
CONDUCTED EMISSIONS
Conducted emissions is a measure of noise conducted onto the
mains power supply. Switching transients from the charge pump
that are 20 V in magnitude and that contain significant energy
can lead to conducted emissions. Another source of conducted
emissions is the overlap in switch-on times in the charge-pump
voltage converter. In the voltage doubler shown in Figure 23, if
S2 is not fully turned off before S4 turns on, a transient current
glitch occurs between V
CC
and GND that results in conducted
emissions. Therefore, it is important that the switches in the
charge pump guarantee break-before-make switching under all
conditions to prevent instantaneous short-circuit conditions.
The ADM202E is designed to minimize the switching transients
and ensure break-before-make switching, thereby minimizing
conducted emissions. This results in emission levels well below
the specified limits. No additional filtering or decoupling, other
than the recommended 0.1 µF capacitor, is required.
Conducted emissions are measured by monitoring the mains
line. The equipment used consists of a spectrum analyzer and a
LISN (line impedance stabilizing network) that essentially
presents a fixed impedance at RF. The spectrum analyzer scans
for emissions of up to 30 MHz; a plot for the ADM202E is
shown in Figure 25.
S1
S2
C1
S4
S3
C3
V+ = 2V
CC
V
CC
INTERNAL
OSCILLATOR
GND
V
CC
00066-023
Figure 23. Charge-Pump Voltage Doubler
2
SWITCHING GLITCHES
1
00066-024
Figure 24. Switching Glitches

ADM202EARUZ-REEL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RS-232 Interface IC 2 CH 15KV ESD Protected IC
Lifecycle:
New from this manufacturer.
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