BAW101V
Document number: DS32178 Rev. 4 - 2
1 of 4
www.diodes.com
September 2010
© Diodes Incorporated
BAW101
NEW PRODUCT
HIGH VOLTAGE DUAL SWITCHING DIODE
Features
• Fast Switching Speed: Maximum of 50ns
• High Reverse Breakdown Voltage: 325V for Single Diode or
650V for Series Connection
• Two Electrically Isolated Elements in a Single Compact Package
• Low Leakage Current: Maximum of 50nA when V
R
= 5V or
Maximum of 150nA when V
R
= 250V at Room Temperature
• Thermally Efficient Copper Alloy leadframe for High Power
Dissipation
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage
Single Diode
V
RRM
325
650
V
Series Connection
Working Peak Reverse Voltage
DC Blocking Voltage
Single Diode
V
RWM
V
R
325
650
V
Series Connection
RMS Reverse Voltage
V
R
RMS
230 V
Forward Current (Note 2)
Single Diode Loaded
I
F
250
140
mA
Double Diode Loaded
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
I
FSM
8.0 A
Repetitive Peak Forward Current @ t = 8.3ms (Note 2)
I
FRM
3.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
P
D
500 mW
Thermal Resistance Junction to Ambient Air (Note 2)
R
JA
250
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 1)
V
BR
R
300
⎯
V
I
R
= 100μA
Forward Voltage
V
F
⎯
1.1 V
I
F
= 100mA
Reverse Current (Note 1)
I
R
⎯
⎯
⎯
50
150
50
nA
nA
μA
V
R
= 5V
V
R
= 250V
V
R
= 250V, T
J
= 150°C
Total Capacitance
C
T
⎯
2.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
50 ns
I
F
= I
R
= 30mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
To
View Bottom View Device Schematic
123
654
