Document Number: 001-86210 Rev. *F Page 7 of 18
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –55 C to +125 C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage on V
DD
relative to V
SS
........–1.0 V to + 7.0 V
Voltage applied to outputs
in High Z state .................................... –0.5 V to V
DD
+ 0.5 V
Input voltage .......... –1.0 V to + 7.0 V and V
IN
< V
DD
+ 1.0 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to V
CC
+ 2.0 V
Package power dissipation
capability (T
A
= 25 °C) ................................................. 1.0 W
Surface mount Pb soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
Human Body Model (AEC-Q100-002 Rev. E) ............ 4 kV
Charged Device Model (AEC-Q100-011 Rev. B) .. 1.25 kV
Machine Model (AEC-Q100-003 Rev. E) ................. 300 V
Latch-up current ................................................... > 140 mA
Operating Range
Range Ambient Temperature (T
A
) V
DD
Industrial –40 C to +85 C 2.7 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min Typ
[1]
Max Unit
V
DD
Power supply voltage 2.7 3.3 5.5 V
I
DD
V
DD
supply current V
DD
= 5.5 V, CE cycling at min. cycle time. All
inputs toggling at CMOS levels
(0.2 V or V
DD
– 0.2 V), all DQ pins unloaded.
––12mA
I
SB
Standby current V
DD
= 5.5 V, CE at V
IH
, All other pins are static
and at CMOS levels (0.2 V or V
DD
– 0.2 V)
–2050µA
I
LI
Input leakage current V
IN
between V
DD
and V
SS
––+1µA
I
LO
Output leakage current V
OUT
between V
DD
and V
SS
––+1µA
V
IH
Input HIGH voltage 0.7 × V
DD
–V
DD
+ 0.3 V
V
IL
Input LOW voltage – 0.3 – 0.3 × V
DD
V
V
OH1
Output HIGH voltage I
OH
= –1.0 mA, V
DD
> 2.7 V 2.4 – – V
V
OH2
Output HIGH voltage I
OH
= –100 µA V
DD
– 0.2 – – V
V
OL1
Output LOW voltage I
OL
= 2 mA, V
DD
> 2.7 V – – 0.4 V
V
OL2
Output LOW voltage I
OL
= 150 µA – – 0.2 V
Data Retention and Endurance
Parameter Description Test condition Min Max Unit
T
DR
Data retention At +85 C 10 – Years
At +75 C38–
At +65 C151–
NV
C
Endurance Over operating temperature 10
14
– Cycles
Note
1. Typical values are at 25 °C, V
DD
= V
DD
(typ). Not 100% tested.
