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FPN530A

P1-P3P4-P4
NPN Low Saturation Transistor
FPN530
FPN530A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NC.
Symbol Characteristic Max Units
FPN530 / FPN530A
P
D
Total Device Dissipation 1.0 W
R
θ
JC
Thermal Resistance, Junction to Case 50
°C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 125
°C/W
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 3.0 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
TO-226
C
B
E
1999 Fairchild Semiconductor Corporation
FPN530 / FPN530A
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 10 mA, I
B
= 0 30 V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
60 V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
5.0 V
I
CBO
Collector Cutoff Current V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100
°
C
100
10
nA
µ
A
I
EBO
Emitter Cutoff Current V
EB
= 4.0 V, I
C
= 0 100 nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2.0 V
530
530A
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
100
250
120
80
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
530
530A
I
C
= 2.0 A, I
B
= 200 mA
300
250
450
mV
mV
mV
V
BE(
sat
)
Base-Emitter Saturation Voltage I
C
= 1.0 A, I
B
= 100 mA 1.25 V
V
BE(
on
)
Base-Emitter Saturation Voltage I
C
= 1.0 A, V
CE
= 2.0 V 1.0 V
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 50 pF
F
T
Transition Frequency I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
150 MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FPN530 / FPN530A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
Base-Emitter On Voltage vs
Collector Current
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Input/Output Capacitance vs
Reverse Bias Voltage
0.1 0.5 1 10 20 50 100
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pf)
CE
f = 1.0MHz
C
ibo
C
obo
Base-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 °C
- 40 °C
125 °C
β = 10
FPN530 / FPN530A
NPN Low Saturation Transistor
(continued)
Current Gain vs Collector Current
0.0001 0.001 0.01 0.1 1 10
0
100
200
300
400
500
600
700
800
I - COLLECTOR CURRENT (A)
H - CURRENT GAIN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
Collector-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
- 40°C
25°C
125°C
β = 10
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPE RATUR E ( C)
P - POWER DISSIPATION (W)
°
D
TO-226
P1-P3P4-P4

FPN530A

Mfr. #:
Buy FPN530A
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 30V 3A TO-226
Lifecycle:
New from this manufacturer.
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