HN1D04FU
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D04FU
Ultra High Speed Switching Application
z Low forward voltage : V
F(3)
= 0.90V (typ.)
z Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z Small total capacitance : C
T
= 0.9pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300* mA
Average forward current I
O
100* mA
Surge current (10ms) I
FSM
2* A
Power dissipation P 200** mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per
diode are 50% of those of the single diode.
** : Total rating
Electrical Characteristics
(Q1, Q2, Q3, Q4 Common; Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F (1)
― I
F
= 1mA ― 0.60 ―
V
F (2)
― I
F
= 10mA ― 0.75 ―
Forward voltage
V
F (3)
― I
F
= 100mA ― 0.90 1.20
V
I
R (1)
― V
R
= 30V ― ― 0.1
Reverse current
I
R (2)
― V
R
= 80V ― ― 0.5
μA
Total capacitance C
T
― V
R
= 0, f = 1MHz ― 0.9 ― pF
Reverse recovery time t
rr
―
I
F
= 10mA (fig.1)
― 1.6 ― ns
1.ANODE1
2.CATHODE2
3.ANODE4
CATHODE3
4.ANODE3
5.CATHODE4
6.CATHODE1
ANODE2
US6
JEDEC
―
JEITA
―
TOSHIBA 1-2T1F
Weight: 6.8 g (typ.)
Unit: mm
Start of commercial production
2000-12
