RDN100N20FU6 Datasheet RDN100N20, RDN100N20FU6 | P1-P3

RDN100N20

Transistors

Rev.A 1/4

10V Drive

Nch

MOS FET

RDN100N20

zStructure

Silicon N-channel

MOS FET

zFeatures

1) Low on-resistance.

2) Low input capacitance.

3) Excellent resistance to damage from static electricity.

zApplication

Switching

zExternal dimensions (Unit : mm)

TO-220FN

(1)Gate

(2)Drain

(3)Source

4.5

2.8

0.75

φ3.2

(

2

)(

3

)(

1

)

0.8

2.54 2.62.54

1.3

1.2

14.0

12.0

8.05.0

10.0

15.0

zPackaging specifications

Package

Code

Bulk

Basic ordering unit (pieces)

RDN100N20

−

500

Type

zAbsolute maximum ratings (Ta=25°C)

∗1

∗2

Parameter

VV

DSS

Symbol

200

VV

GSS

±30

AI

D

10

AI

DP

40

A

I

DR

10

A

I

DRP

40

mJ

I

AS

35

120

10

W

E

AS

150

°C

P

D

T

ch

T

stg

−55 to +150

Limits Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Reverse Drain

Current

Total Power Dissipation (T

C

=25°C)

Channel Temperature

Avalanche Current

Avalanche Energy

Storage Temperature

Continuous

Pulsed

Continuous

Pulsed

∗1

A

I

S

10

I

SP

40

Source Current

(Body Diode)

Continuous

Pulsed

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 L 1.8mH, V

DD

=50V, R

G

=25Ω, 1Pulse, Tch=25°C

zEquivalent circuit

∗1 ESD Protection diode

∗2 Body Diode

Drain

Gate

Source

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

∗1

∗2

zThermal resistance

Parameter

°C/W

Rth(ch-c)

Symbol Limits Unit

Channel to case

3.57

°C/W

Rth(ch-a)Channel to ambient

62.5

RDN100N20

Transistors

Rev.A 2/4

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Max.Typ. Unit Conditions

Gate-Source Leakage

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Forward Transfer Admittance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

I

GSS

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

⏐Y

fs

⏐

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

Min.

⎯

200

⎯

2.0

⎯

2.3

⎯

V

GS

=±30V, V

DS

=0V

I

D

=250µA, V

GS

=0V

V

DS

=200V, V

GS

=0V

V

DS

=10V, I

D

=1mA

I

D

=5A, V

GS

=10V

V

DS

=10V, I

D

=5A

V

DS

=10V

V

GS

=0V

f=1MHz

I

D

=5A, V

DD

100V

V

GS

=10V

R

L

=20Ω

R

G

=10Ω

V

DD

=100V

V

GS

=10V

I

D

=10A

⎯

0.27

3.8

543

193

64

13

29

38

26

15.0

5.0

5.2

µA

V

µA

V

Ω

S

pF

ns

nC

±10

⎯

25

4.0

0.36

⎯

30.0

⎯

Static Drain-Source On-State

Resistance

∗

Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

V

SD

−−2.0 V I

S

= 5A, V

GS

=0VForward voltage

t

rr

− 133 − ns I

DR

= 10A, V

GS

=0V

di/dt= 100A / µs

Reverse recovery time

Q

rr

− 0.54 −µCReverse recovery charge

Parameter Symbol

Min. Typ. Max.

Unit

Conditions

∗ Pulsed

∗

RDN100N20

Transistors

Rev.A 3/4

zElectrical characteristic curves

1 10 1000100

DRAIN-SOURCE VOLTAGE : V

DS

(V)

0.1

1

10

100

DRAIN CURRENT : I

D

(A)

Fig.1 Maximun Safe

Operating Area

T

C

=25°C

Single Pulse

100µs

1mS

Pw

=10mS

DC Operation

Operation in this

area is limited

by Ros(on)

020

02468

GATE-SOURCE VOLTAGE : V

GS

(V)

0.01

0.1

1

10

100

DRAIN CURRENT : I

D

(A)

Fig.3 Typical Transfer

Characteristics

10

V

DS

=10V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

18161412108642

DRAIN-SOURCE VOLTAGE : V

DS

(V)

0

20

18

16

14

12

10

8

6

4

2

Fig.2 Typical Output Characteristics

DRAIN CURRENT : I

D

(A)

Ta=25°C

Pulsed

8V

5V

6V

7V

V

GS

=4V

10V

9V

−50 −25 0 25 50 75 100 125 150

CHANNEL TEMPERATURE : T

ch

(°C)

0

6.4

5.6

4.8

4

3.2

2.4

1.6

0.8

GATE THRESHOLD VOLTAGE : V

GS (th)

(V)

Fig.4 Gate Threshold Voltage

vs. Channel Temperature

V

DS

=10V

I

D

=1mA

0.01 0.1 1 10 100

DRAIN CURRENT : I

D

(A)

0.1

1

Fig.5 Static Drain-Source

On-State Resistance

vs. Drain Current

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(Ω)

V

GS

=10V

Pulsed

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

0 5 10 15 20 25 30

GATE-SOURCE VOLTAGE : V

GS

(V)

0

1

0.75

0.5

0.25

Fig.6 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta=25°C

Pulsed

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(Ω)

I

D

=10A

5A

−50 1501251007550250−25

CHANNEL TEMPERATURE : T

ch

(°C)

0

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Fig.7 Static Drain-Source

On-State Resistance vs.

Channel Temperature

V

GS

=10V

Pulsed

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(Ω)

4A

I

D

=10A

0.05 0.2 0.50.1 1 2 5 10 20

DRAIN CURRENT : I

D

(A)

0.2

FORWARD TRANSFER

ADMITTANCE :⏐Yfs⏐(S)

20

10

5

2

1

0.5

Fig.8 Forward Transfer Admittance

vs. Drain Current

V

DS

=10V

Pulsed

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

0 1.51.41.31.21.110.90.80.70.60.50.40.30.20.1

SOURCE-DRAIN VOLTAGE : V

SD

(V)

0.01

0.1

1

10

100

REVERSE DRAIN CURRENT : I

DR

(A)

Fig.9 Reverse Drain Current vs.

Source-Drain Voltage

V

GS

=0V

Pulsed

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

RDN100N20FU6

RDN100N20FU6

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