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SE12DBHM3/I

P1-P3P4-P5
SE12DB, SE12DD, SE12DG, SE12DJ
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-16
1
Document Number: 89984
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifiers
FEATURES
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• ESD capability
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Notes
(1)
With heatsink
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
12 A
V
RRM
100 V, 200 V, 400 V, 600 V
I
FSM
125 A
V
F
at I
F
= 12 A (T
A
= 125 °C) 0.96 V
I
R
20 μA
T
J
max. 175 °C
Package TO-263AC (SMPD)
Diode variations Single
SE12DX
Top View Bottom View
PIN 1
K
HEATSINK
PIN 2
eSMP
®
Series
TO-263AC (SMPD)
K
1
2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SE12DB SE12DD SE12DG SE12DJ UNIT
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 V
Maximum DC forward current
I
F
(1)
12
A
I
F
(2)
3.2
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
125 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
SE12DB, SE12DD, SE12DG, SE12DJ
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-16
2
Document Number: 89984
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient
(3)
With infinite heatsink
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 6 A
T
A
= 25 °C
V
F
(1)
0.95 -
V
I
F
= 12 A 1.04 1.15
I
F
= 6 A
T
A
= 125 °C
0.85 -
I
F
= 12 A 0.96 1.10
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-20
μA
T
A
= 125 °C 27 150
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
3000 - ns
Typical junction capacitance 4.0 V, 1 MHz C
J
90 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °c unless otherwise noted)
PARAMETER SYMBOL SE12DB SE12DD SE12DG SE12DJ UNIT
Typical thermal resistance
R
JA
(1)(2)
60
°C/W
R
JC
(3)
1.6
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k V
C
H3B > 8 kV
ORDERING INFORMATION (Example)
STANDARD PREFERRED P/N UNIT WEIGHT (g)
PREFERRED PACKAGE
CODE
BASE
QUANTITY
DELIVERY MODE
TO-263AC (SMPD) SE12DJ-M3/I 0.54 I 2000/reel 13" diameter plastic tape and reel
TO-263AC (SMPD) SE12DJHM3/I
(1)
0.54 I 2000/reel 13" diameter plastic tape and reel
SE12DB, SE12DD, SE12DG, SE12DJ
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-16
3
Document Number: 89984
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Mount Temperature (°C)
Rth
JC
= 1.6
o
C/W
Free air, T
A,
Rth
JA
= 60
o
C/W
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.01
0.1
1
10
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 125 °C
T
A
= 175 °C
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
T
= 150 °C
T = 125 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 175 °C
A
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
P1-P3P4-P5

SE12DBHM3/I

Mfr. #:
Buy SE12DBHM3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 12A 100V AEC-Q101 ESD Rectifr
Lifecycle:
New from this manufacturer.
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