OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NVLJD4007NZTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 0
1 Publication Order Number:
NVLJD4007NZ/D
NVLJD4007NZ
Small Signal MOSFET
30 V, 245 mA, Dual, N−Channel, Gate ESD
Protection, 2x2 WDFN Package
Features
• Optimized Layout for Excellent High Speed Signal Integrity
• Low Gate Charge for Fast Switching
• Small 2 x 2 mm Footprint
• ESD Protected Gate
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
"10 V
Continuous Drain
Current (Note 1)
Steady State = 25°C I
D
245 mA
Power Dissipation
(Note 1)
Steady State = 25°C P
D
755 mW
Pulsed Drain Current
t
P
v 10 ms
I
DM
1.2 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Continuous Source Current (Body Diode) I
SD
245 mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
166 °C/W
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2.3 W @ 2.5 V
R
DS(on)
Typ @ V
GS
I
D
MAX
(Note 1)
V
(BR)DSS
1.4 W @ 4.5 V
30 V 245 mA
G (2)
D (6)
S (1)
N−Channel
http://onsemi.com
JG = Specific Device Code
M = Date Code
G = Pb−Free Package
JGG
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
2
3
6
5
4
S1
G1
S2
D1
G2
D2
(Top View)
1
PIN CONNECTIONS
D1
D2
Device Package Shipping
†
ORDERING INFORMATION
NVLJD4007NZTAG WDFN6
(Pb−Free)
3000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NVLJD4007NZTBG WDFN6
(Pb−Free)
3000/Tape &
Reel
G (5)
D (4)
S (3)
N−Channel
NVLJD4007NZ
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
Reference to 25°C, I
D
= 100 mA
27
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 30 V 1.0
mA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 20 V,
T = 85 °C
1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±10 V ±25
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±5 V ±1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±5 V
T = 85 °C
±1.0
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 100 mA
0.5 1.0 1.5 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
Reference to 25°C, I
D
= 100 mA
−2.5 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 125 mA 1.4 7.0
W
V
GS
= 2.5 V, I
D
= 125 mA 2.3 7.5
Forward Transconductance g
FS
V
DS
= 3 V, I
D
= 125 mA 80 mS
CAPACITANCES & GATE CHARGE
Input Capacitance
C
ISS
V
DS
= 5.0 V, f = 1 MHz,
V
GS
= 0 V
12.2 20
pF
Output Capacitance C
OSS
10 15
Reverse Transfer Capacitance C
RSS
3.3 6.0
Total Gate Charge Q
g
V
DS
= 24 V, I
D
= 100 mA,
V
GS
= 4.5 V
0.75
nC
Gate−to−Source Charge Q
gs
0.20
Gate−to−Drain Charge Q
gd
0.20
Plateau Voltage V
GP
1.57 V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 24 V,
I
D
= 125 mA, R
G
= 10 W
9 ns
Rise Time t
r
41
ns
Turn−Off Delay Time t
d(OFF)
96
Fall Time t
f
72
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 125 mA 0.79 0.9 V
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NVLJD4007NZ
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 150°C
0
0.9
4.00.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D,
DRAIN CURRENT (A)
0.7
0.2
0
Figure 1. On−Region Characteristics
0 2.0 4.0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1.0
8.0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS,
GATE VOLTAGE (V)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50 0−25 25
1.2
0.7
0.6
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
2.0
T
J
= −55°C
75
I
D
= 125 mA
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.3
V
GS
= 2.5 V
V
GS
= 4.5 V
1.5 3.5
0.1
25
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
15
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 125°C
10
100
V
DS
= 5 V
20
2.0 V
0.5
1.8 V
3.0
30
1.2
1.0
V
GS
= 10 V
10
125100 0
5.0
105
3.01.5
1.5
5.0
4.5
T
J
= 25°C
I
D
= 125 mA
I
D,
DRAIN CURRENT (A)
1.9
1000
2.4 V
3.51.0
1.0
8.0
0.10 0.70.5
10
4.0
1.2
0.8
1.4
0.9
1.6
1.1
1.8
0.8
0.6
0.1
0.3
0.9
0.6
0.1
0
0.4
1.2
0.5 3.0
0.4
1.1
1.0 2.0 2.5 3.5 4.5
2.2 V
2.8 V
2.6 V
3.0 V
3.5 V
4.0 V
5.0 V
4.5 V
2.5 4.5
0.2
0.3
0.5
0.7
0.8
1.0
1.1
2.5 4.0
2.0
3.0
4.0
6.0
7.0
9.0
0.2 0.3 0.4 0.6 0.8 0.9
1.0 1.1
2.0
3.0
5.0
6.0
7.0
9.0
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
1.0
1.5
1.7
T
J
= 85°C
1
P1-P3P4-P6

NVLJD4007NZTAG

Mfr. #:
Buy NVLJD4007NZTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET WDFN6 30V 1.4 Ohms
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet