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VS-123NQ100PBF

P1-P3P4-P6
VS-123NQ100PbF
www.vishay.com
Vishay Semiconductors
Revision:19-Mar-15
1
Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 120 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-123NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
120 A
V
R
100 V
Package HALF-PAK (D-67)
Circuit Single diode
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 120 A
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 12 800 A
V
F
120 A
pk
, T
J
= 125 °C 0.73 V
T
J
Range -55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-123NQ100PbF UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 133 °C, rectangular waveform 120 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
12 800
A
10 ms sine or 6 ms rect. pulse 1800
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 5.5 A, L = 1 mH 15 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
VS-123NQ100PbF
www.vishay.com
Vishay Semiconductors
Revision:19-Mar-15
2
Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width = 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
120 A
T
J
= 25 °C
0.91
V
240 A 1.26
120 A
T
J
= 125 °C
0.73
240 A 0.9
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 40
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 2650 pF
Typical series inductance L
S
From top of terminal hole to mounting plane 7.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-55 to 175 °C
Maximum thermal resistance, junction to case R
thJC
DC operation
See fig. 4
0.38
°C/W
Typical thermal resistance, case to heatsink R
thCS
Mounting surface, smooth and greased 0.05
Approximate weight
30 g
1.06 oz.
Mounting torque
minimum
Non-lubricated threads
3 (26.5)
N m
(lbf in)
maximum 4 (35.4)
Terminal torque
minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
100
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 1.0 2.00.5
1000
1.5
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.001
0.01
0.1
0 80 100
10
1000
20 40
60
100
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-123NQ100PbF
www.vishay.com
Vishay Semiconductors
Revision:19-Mar-15
3
Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10 000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
20
40 50 60 70 80 90 100 11010 30
1000
100
T
J
= 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01
0.1
110
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
100
120
140
180
0 60 120 18030 90 150
160
110
DC
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
170
150
130
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
020
40
60 80
100 120 180
0
20
60
120
140
80
40
100
160
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
P1-P3P4-P6

VS-123NQ100PBF

Mfr. #:
Buy VS-123NQ100PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 120 Amp 100 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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