SM15T39A-E3/9AT

SM15T Series
www.vishay.com
Vishay General Semiconductor
Revision: 06-Feb-15
1
Document Number: 88380
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB
®
Transient Voltage Suppressors
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM15T12CA).
Electrical characteristics apply in both directions.
APPLICATION NOTES
A 1500 W (SMC) device is normally selected when the threat
of transients is from lightning induced transients, conducted
via external leads or I/O lines. It is also used to protect
against switching transients induced by large coils or
industrial motors. Source impedance at component level in
a system is usually high enough to limit the current within the
peak pulse current (I
PP
) rating of this series. In an overstress
condition, the failure mode is a short circuit.
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform
Excellent clamping capability
Low inductance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC J-Bend)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and industrial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2.
(2)
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
PRIMARY CHARACTERISTICS
V
WM
5.8 V to 188 V
V
BR
uni-directional 6.8 V to 220 V
V
BR
bi-directional 6.8 V to 220 V
P
PPM
1500 W
P
D
6.5 W
I
FSM
(uni-directional only) 200 A
T
J
max. 150 °C
Polarity Uni-directional, bi-directional
Package DO-214AB (SMC J-Bend)
DO-214AB (SMC J-Bend)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1) P
PPM
1500 W
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3) I
PPM
See next table A
Power dissipation on infinite heatsink at T
A
= 50 °C P
D
6.5 W
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
I
FSM
200 A
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
SM15T Series
www.vishay.com
Vishay General Semiconductor
Revision: 06-Feb-15
2
Document Number: 88380
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
For bi-directional devices add suffix “CA” instead of “A”
(2)
V
BR
measured after I
T
applied for 300 µs square wave pulse
(3)
For bi-polar devices with V
RM
= 10 V or under, the I
RM
limit is doubled
Note
(1)
Mounted on minimum recommended pad layout
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
TYPE
(1)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
(2)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
RM
(V)
LEAKAGE
CURRENT
I
RM
AT V
RM
I
D
(3)
(μA)
CLAMPING
VOLTAGE
V
C
AT I
PPM
(10/1000 μs)
CLAMPING
VOLTAGE
V
C
AT I
PPM
(8/20 μs)
T
MAX.
10
-4
/°C
UNI BI MIN. MAX. (V) (A) (V) (A)
SM15T6V8A GDE7 GDE7 6.45 7.14 10 5.80 1000 10.5 143 13.4 746 5.7
SM15T7V5A GDK7 BDK7 7.13 7.88 10 6.40 500 11.3 132 14.5 690 6.1
SM15T10A GDT7 BDT7 9.50 10.5 1.0 8.55 10 14.5 103 18.6 538 7.3
SM15T12A GDX7 BDX7 11.4 12.6 1.0 10.2 5.0 16.7 90.0 21.7 461 7.8
SM15T15A GEG7 GEG7 14.3 15.8 1.0 12.8 1.0 21.2 71.0 27.2 368 8.4
SM15T18A GEM7 BEM7 17.1 18.9 1.0 15.3 1.0 25.2 59.5 32.5 308 8.8
SM15T22A GET7 BET7 20.9 23.1 1.0 18.8 1.0 30.6 49.0 39.3 254 9.2
SM15T24A GEV7 GEV7 22.8 25.2 1.0 20.5 1.0 33.2 45.0 42.8 234 9.4
SM15T27A GEX7 BEX7 25.7 28.4 1.0 23.1 1.0 37.5 40.0 48.3 207 9.6
SM15T30A GFE7 BFE7 28.5 31.5 1.0 25.6 1.0 41.5 36.0 53.5 187 9.7
SM15T33A GFG7 GFG7 31.4 34.7 1.0 28.2 1.0 45.7 33.0 59.0 169 9.8
SM15T36A GFK7 BFK7 34.2 37.8 1.0 30.8 1.0 49.9 30.0 64.3 156 9.9
SM15T39A GFM7 BFM7 37.1 41.0 1.0 33.3 1.0 53.9 28.0 69.7 143 10.0
SM15T68A GGG7 GGG7 64.6 71.4 1.0 58.1 1.0 92.0 16.3 121 83 10.4
SM15T100A GGV7 GGV7 95.0 105 1.0 85.5 1.0 137 11.0 178 56 10.6
SM15T150A GHK7 GHK7 143 158 1.0 128 1.0 207 7.20 265 38 10.8
SM15T200A GHR7 GHR7 190 210 1.0 171 1.0 274 5.50 353 28 10.8
SM15T220A GHR8 GHR8 209 231 1.0 188 1.0 328 4.60 388 26 10.8
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient air
(1)
R
JA
75
°C/ W
Typical thermal resistance, junction to lead R
JL
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM15T10A-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
SM15T10A-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
SM15T10AHE3/57T
(1)
0.211 57T 850 7" diameter plastic tape and reel
SM15T10AHE3/9AT
(1)
0.211 9AT 3500 13" diameter plastic tape and reel
SM15T Series
www.vishay.com
Vishay General Semiconductor
Revision: 06-Feb-15
3
Document Number: 88380
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance Uni-Directional
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
0.1
1
10
100
P
PPM
- Peak Pulse Power (kW)
t
d
- Pulse Width (s)
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0 25 50 75 100
100
75
50
25
0
125 150 175 200
T
J
- Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 µs Waveform
as defined by R.E.A.
0
1.0
2.0
3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
20 000
101 100 400
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Zero Bias
V
R
, Measured at
Stand-Off
Voltage, V
WM
C
J
- Junction Capacitance (pF)
V
WM
- Reverse Stand-Off Voltage (V)
0.1
1.0
10
100
0.001 0.01 0.1 10 1 100 1000
t - Pulse Duration
(
s
)
Transient Thermal Impedance (°C/W)
1
10
100
10
100
200
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)

SM15T39A-E3/9AT

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 1500W 39V 5% Uni
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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