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BAS16WS-HE3-18

P1-P3P4-P4
BAS16WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
1
Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAS16WS
BAS16WS-E3-08 or BAS16WS-E3-18
BAS16WS-HE3-08 or BAS16WS-HE3-18
Single diode A6 Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75 V
Repetitive peak reverse voltage V
RRM
100 V
Forward current (continuous) I
F
250 mA
Non-repetitive peak forward current
t = 1 μs I
FSM
2A
t = 1 ms I
FSM
1A
t = 1 s I
FSM
0.5 A
Power dissipation P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
650 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C
BAS16WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
2
Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 150 mA V
F
1.250 V
I
F
= 1 mA V
F
0.715 V
I
F
= 10 mA V
F
0.855 V
I
F
= 50 mA V
F
1V
Leakage current
V
R
= 75 V I
R
1000 nA
V
R
= 25 V, T
J
= 150 °C I
R
30 μA
V
R
= 75 V, T
J
= 150 °C I
R
50 μA
Diode capacitance V
R
= 0, f = 1 MHz C
D
2pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
t
rr
6ns
18105
I
F
(mA)
V
F
(V)
T
j
= 100 °C
T
j
= 25 °C
10
- 2
10
- 1
10
2
10
3
1
10
120
17438
f = 1 kHz
T
j
= 25 °C
I
F
(mA)
R
f
(Ω)
10
10
2
10
3
10
4
10
-2
10
-1
110
2
10
2
5
2
5
2
5
2
5
18185
P
tot
(mW)
T
amb
(°C)
0
100
400
500
200
300
100 2000
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1
f = 1 MHz
T
j
= 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)
BAS16WS
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 14-Oct-16
3
Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
17441
T
j
(°C)
I
R
(nA)
10
10
2
10
3
10
4
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
P1-P3P4-P4

BAS16WS-HE3-18

Mfr. #:
Buy BAS16WS-HE3-18
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 75 Volt 0.25 Amp 2.0A IFSM @ 1uS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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