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ABA-31563-TR2G

P1-P3P4-P6P7-P7
ABA-31563
3.5 GHz Broadband Silicon RFIC Amplifier
Data Sheet
Description
Avago’s ABA-31563 is an economical, easy-to-use, internally
50Ω matched, silicon monolithic broadband amplifier
that offers excellent gain and broadband response
from DC to 3.5 GHz. Packaged in an ultra-miniature
SOT-363 package, it requires half the board space of
a SOT-143 package.
At 2 GHz, the ABA-31563 offers a small-signal gain of
21.5 dB, output P1dB of 2.2 dBm and 13.1 dBm output
third order intercept point. It is suitable for use as
wideband applications. They are designed for low cost
gain blocks in cellular applications, DBS tuners, LNB and
other wireless communication systems.
ABA-31563 is fabricated using Avago’s HP25 silicon
bipolar process, which employs a double-diffused single
polysilicon process with self-aligned submicron emitter
geometry. The process is capable of simultaneous high
f
T
and high NPN breakdown (25 GHz f
T
at 6V BVCEO). The
process utilizes industry standard device oxide isolation
technologies and submicron aluminum multilayer
interconnect to achieve superior performance, high
uniformity, and proven reliability.
Features
• Operating Frequency DC ~ 3.5GHz
• 21.5 dB Gain
• VSWR < 2.0 throughout operating frequency
• 2.2 dBm Output P1dB
• 13.1 dBm Output IP3
• 3.8 dB Noise Figure
• Unconditionally Stable
• Single 3V Supply (Id = 14 mA)
• Lead-free
Applications
• Amplifier for Cellular, Cordless, Special Mobile Radio,
PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner
Applications
Surface Mount Package
SOT-363/SC70
Pin Connections and Package Marking
Simplified Schematic
Note:
Top View. Package marking provides orientation
and identification. “x” is the date code.
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Vcc
GND 3
1Kx
Input
GND 1
GND 2
Output
& Vcc
Vcc
Ground 1
Ground 2
Ground 3
RF
Input
RF
Output
& Vcc
2
ABA-31563 Absolute Maximum Ratings
[1]
Symbol Parameter Units Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25°C) V 6
P
in
CW RF Input Power (Vcc = 3V) dBm 15
P
diss
Total Power Dissipation
[3]
W 0.3
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 2.3 mW/°C for Tc
> 120.8°C.
Electrical Specifications T
c
= +25°C, Z
o
= 50 Ω, P
in
= -30 dBm, V
cc
= 3V, Freq = 2 GHz, unless stated otherwise.
Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev.
Gp
[1]
Power Gain (|S
21
|
2
) dB 20.0 21.5
∆Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 0.2
f = 0.1 ~ 3.5 GHz 1.3
NF
[1]
Noise Figure dB 3.8 4.8
P1dB
[1]
Output Power at 1dB Gain Compression dBm 2.2
OIP3
[1]
Output Third Order Intercept Point dBm 13.1
VSWR
in
[1]
Input VSWR <1.5
VSWR
out
[1]
Output VSWR <1.5
Icc
[1]
Device Current mA 14 16
Td
[1]
Group Delay ps 140
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
Figure 1. ABA-31563 Production Test Circuit.
Thermal Resistance
[2]
(Vcc = 3V)
θ
j-c
= 125°C/W
RF Output
RF Input
Vcc
RFC
33 nH
C
block
1 nF
C
block
1 nF
1Kx
C
bypass
100 pF
C
bypass
1000 pF
3
ABA-31563 Typical Performance T
c
= +25°C, Z
o
= 50Ω, V
cc
= 3V unless stated otherwise.
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5
2 2.5 31.5
3.5
3.5V
3V
2.7V
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5
2 2.5 31.5
3.5
+85C
+25C
-40C
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and Voltage.
NF (dB)
0
6
5.5
5
4.5
4
3.5
3
41
0.5
2 2.5 31.5
3.5
3.5V
3V
2.7V
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and Temperature.
NF (dB)
0
6
5.5
5
4.5
4
3.5
3
41
0.5
2 2.5 31.5
3.5
+85C
+25C
-40C
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain Compression vs.
Frequency and Voltage.
P1dB (dBm)
0
6
4
2
0
-2
-4
41
0.5
2 2.5 31.5
3.5
3.5V
3V
2.7V
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain Compression vs.
Frequency and Temperature.
P1dB (dBm)
0
6
4
2
0
-2
-4
41
0.5
2 2.5 31.5
3.5
+85C
+25C
-40C
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ABA-31563-TR2G

Mfr. #:
Buy ABA-31563-TR2G
Manufacturer:
Broadcom / Avago
Description:
IC AMP CELLULR 0HZ-3.5GHZ SOT363
Lifecycle:
New from this manufacturer.
Delivery:
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