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FN6299.5
July 18, 2014
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about 30µs/V to minimize current surge. The ISL9003A
provides short-circuit protection by limiting the output current
to about 265mA (typ).
The LDO uses an independently trimmed 1V reference as its
input. An internal resistor divider drops the LDO output
voltage down to 1V. This is compared to the 1V reference for
regulation. The resistor division ratio is programmed in the
factory.
Overheat Detection
The bandgap outputs a proportional-to-temperature current
that is indicative of the temperature of the silicon. This
current is compared with references to determine if the
device is in danger of damage due to overheating. When the
die temperature reaches about +140°C, the LDO
momentarily shuts down until the die cools sufficiently. In the
overheat condition, if the LDO sources more than 50mA it
will be shut off. Once the die temperature falls back below
about +110°C, the disabled LDO is re-enabled and soft-start
automatically takes place.
Exposed Thermal Pad
The ISL9003A with µTDFN package has an exposed
thermal pad at the bottom side of the package. The PCB
layout should connect the exposed pad to some copper on
the component layer for a good thermal conductivity. Since
the copper area on the component layer is limited by the
surrounding pins of the package, it is more effective to use
some thermal vias to conduct the heat to other copper layers
if possible.
Electrically the copper and vias connecting to the exposed
pad should be isolated from any other pin connection, they
are strictly for thermal enhancement purpose.
ISL9003A
