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BC856BM3T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 2
1 Publication Order Number:
BC856BM3/D
BC856BM3, NSVBC856BM3
General Purpose Transistor
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−723 which is designed for low
power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−65 V
Collector−Base Voltage V
CBO
−80 V
Emitter−Base Voltage V
EBO
−5.0 V
Collector Current − Continuous I
C
−100 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 2)
R
q
JA
195 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
†
ORDERING INFORMATION
SOT−723
CASE 631AA
STYLE 1
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
BC856BM3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
http://onsemi.com
3B = Specific Device Code
M = Date Code
3B M
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
2
1
NSVBC856BM3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
BC856BM3, NSVBC856BM3
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CEO
−65 − −
V
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA, V
EB
= 0)
V
(BR)CES
−80 − −
V
Collector−Base Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CBO
−80 − −
V
Emitter−Base Breakdown Voltage
(I
E
= −1.0 mA)
V
(BR)EBO
−5.0 − −
V
Collector Cutoff Current (V
CB
= −30 V)
(V
CB
= −30 V, T
A
= 150°C)
I
CBO
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mA, V
CE
= −5.0 V)
(I
C
= −2.0 mA, V
CE
= −5.0 V)
h
FE
−
220
150
290
−
475
−
Collector−Emitter Saturation Voltage (I
C
= −10 mA, I
B
= −0.5 mA)
Collector−Emitter Saturation Voltage (I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.65
V
Base −Emitter Saturation Voltage (I
C
= −10 mA, I
B
= −0.5 mA)
Base −Emitter Saturation Voltage (I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
V
Base −Emitter Voltage (I
C
= −2.0 mA, V
CE
= −5.0 V)
Base −Emitter Voltage (I
C
= −10 mA, V
CE
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
100 − −
MHz
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
C
obo
− − 4.5
pF
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
− − 10
dB
BC856BM3, NSVBC856BM3
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1 -1.0
-10 -200
-0.2
0.2
0.5
-0.2 -1.0
-10 -200
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -2.0
-10 -200
-1.0
T
J
= 25°C
I
C
=
-10 mA
h
FE
, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
V
CE
= -5.0 V
T
A
= 25°C
0
-0.5 -2.0 -5.0
-20 -50 -100
-0.05 -0.2 -0.5 -2.0 -5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5 -5.0 -20
-50 -100
-55°C to 125°C
q
VB
for V
BE
-2.0
-5.0
-20
-50
-100
Figure 5. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 6. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2 -1.0 -50
2.0
-2.0 -10
-100
100
200
500
50
20
20
10
6.0
4.0
-1.0 -10
-100
V
CE
= -5.0 V
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
-0.5 -5.0 -20
T
J
= 25°C
C
ob
C
ib
8.0
-50 mA
-200 mA
P1-P3P4-P4

BC856BM3T5G

Mfr. #:
Buy BC856BM3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 65V PNP
Lifecycle:
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