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VS-6EVL06-M3/I

P1-P3P4-P6P7-P7
VS-6EVL06-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Jul-17
1
Document Number: 96143
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultralow V
F
Ultrafast Rectifier, 6 A FRED Pt
®
FEATURES
• Ultrafast recovery time, extremely low V
F
and
soft recovery
• For PFC CCM operation
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters, or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
MECHANICAL DATA
Case: SlimDPAK
Molding compound meets UL 94 V-0 flammability rating
Base PN/-M3 - halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
PRODUCT SUMMARY
Package SlimDPAK (TO-252AE)
I
F(AV)
6 A
V
R
600 V
V
F
at I
F
0.98 V
t
rr
(typ.) 34 ns
T
J
max. 175 °C
Diode variation Single
Heatsink
k
1
2
Pin 1 Pin 2
1
2
SlimDPAK (TO-252AE)
k
eSMP
®
Series
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 158 °C 6
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 80
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 6 A - 1.15 1.35
I
F
= 6 A, T
J
= 150 °C - 0.98 1.15
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 125
Junction capacitance C
T
V
R
= 600 V - 10 - pF
VS-6EVL06-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Jul-17
2
Document Number: 96143
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 45 -
ns
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 34 -
I
F
= 0.5 A, I
R
= 1 A, I
RR
= 0.25 A - - 50
T
J
= 25 °C
I
F
= 6 A
dI
F
/dt = 500 A/μs
V
R
= 400 V
-65-
T
J
= 125 °C - 90 -
Peak recovery current I
RRM
T
J
= 25 °C - 9.5 -
A
T
J
= 125 °C - 13.5 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 320 -
nC
T
J
= 125 °C - 620 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature
range
T
J
, T
Stg
-55 - 175 °C
Thermal resistance, junction to case R
thJC
--2.5°C/W
Marking device Case style SlimDPAK (TO-252AE) 6EVL06
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 25 °C
T
J
= 175 °C
T
J
= 150 °C
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
150 °C
175 °C
VS-6EVL06-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Jul-17
3
Document Number: 96143
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
10
100
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance (°C/W)
t
1
- Rectangular Pulse Duration (s)
DC
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
140
145
150
155
160
165
170
175
180
0246810
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
DC
0
2
4
6
8
10
12
14
0123456789
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
P1-P3P4-P6P7-P7

VS-6EVL06-M3/I

Mfr. #:
Buy VS-6EVL06-M3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 6A SlimDPAK FRED
Lifecycle:
New from this manufacturer.
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