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4N35-X019T

P1-P3P4-P6P7-P7
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 16-Jan-12
1
Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, with Base Connection
DESCRIPTION
This datasheet presents five families of Vishay industry
standard single channel phototransistor couplers. These
families include the 4N35, 4N36, 4N37, 4N38 couplers.
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5000 V
RMS
isolation test voltage.
This isolation performance is accomplished through Vishay
double molding isolation manufacturing process. Comliance
to DIN EN 60747-5-5 partial discharge isolation specification
is available for these families by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance available
for a commecial plastic phototransistor optocoupler.
The devices are available in lead formed configuration suitable
for surface mounting and are available either on tape and reel,
or in standard tube shipping containers.
Note
• For additional design information see application note 45
normalized curves
FEATURES
• Isolation test voltage 5000 V
RMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL file no. E52744 (pending)
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• BSI: EN 60065, EN 60950-1
•FIMKO
•CQC
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on end.
1
2
3
6
5
4
B
C
E
A
C
NC
i179004-14
ORDERING INFORMATION
4N3x-X0##T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE
CTR (%)
10 mA 20 mA
UL, cUL, BSI, FIMKO ≥ 100 ≥ 20
DIP-6 4N35-X000 4N36-X000 4N37-X000 4N38
DIP-6, 400 mil, option 6 4N35-X006 - 4N37-X006 -
SMD-6, option 7 4N35-X007T
(1)
4N36-X007 4N37-X007 4N38-X007T
(1)
SMD-6, option 9 4N35-X009T
(1)
4N36-X009T
(1)
4N37-X009 4N38-X009T
VDE, UL, cUL, BSI, FIMKO ≥ 100 ≥ 20
DIP-6 4N35-X001 - 4N37-X001 -
DIP-6, 400 mil, option 6 4N35-X016 - - -
SMD-6, option 7 4N35-X017T
(1)
---
SMD-6, option 9 4N35-X019T - - -
7.62 mm 10.16 mm
> 8 mm
8 mm typ.
Option 7
Option 6
Option 9
DIP-6
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 16-Jan-12
2
Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Surge current t ≤ 10 μs I
FSM
2.5 A
Power dissipation P
diss
70 mW
OUTPUT
Collector emitter breakdown voltage V
CEO
70 V
Emitter base breakdown voltage V
EBO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Output power dissipation P
diss
150 mW
COUPLER
Isolation test voltage t = 1 s V
ISO
5000 V
RMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter
and detector
≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE 0303, part 1 ≥ 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Soldering temperature
(1)
2 mm from case, ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
(1)
I
F
= 10 mA V
F
1.2 1.5 V
I
F
= 10 mA, T
amb
= - 55 °C V
F
0.9 1.3 1.7 V
Reverse current
(1)
V
R
= 6 V I
R
0.1 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
OUTPUT
Collector emitter breakdown
voltage
(1)
I
C
= 1 mA
4N35 BV
CEO
30 V
4N36 BV
CEO
30 V
4N37 BV
CEO
30 V
4N38 BV
CEO
80 V
Emitter collector breakdown
voltage
(1)
I
E
= 100 μA BV
ECO
7V
Collector base breakdown
voltage
(1)
I
C
= 100 μA, I
B
= 1 μA
4N35 BV
CBO
70 V
4N36 BV
CBO
70 V
4N37 BV
CBO
70 V
4N38 BV
CBO
80 V
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 16-Jan-12
3
Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
Indicates JEDEC registered value.
Note
(1)
Indicates JEDEC registered values.
Note
(1)
Indicates JEDEC registered values.
Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Switching Times
OUTPUT
Collector emitter leakage current
(1)
V
CE
= 10 V, I
F
= 0 4N35 I
CEO
550nA
4N36 I
CEO
550nA
V
CE
= 10 V, I
F
= 0 4N37 I
CEO
550nA
V
CE
= 60 V, I
F
= 0 4N38 I
CEO
50 nA
V
CE
= 30 V, I
F
= 0,
T
amb
= 100 °C
4N35 I
CEO
500 μA
4N36 I
CEO
500 μA
4N37 I
CEO
500 μA
V
CE
= 60 V, I
F
= 0,
T
amb
= 100 °C
4N38 I
CEO
6μA
Collector emitter capacitance V
CE
= 0 C
CE
6pF
coupler
Resistance, input output
(1)
V
IO
= 500 V R
IO
10
11
Ω
Capacitance, input output f = 1 MHz C
IO
0.5 pF
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
(1)
V
CE
= 10 V, I
F
= 10 mA
4N35 CTR
DC
100 %
4N36 CTR
DC
100 %
4N37 CTR
DC
100 %
V
CE
= 10 V, I
F
= 20 mA 4N38 CTR
DC
20 %
V
CE
= 10 V, I
F
= 10 mA,
T
A
= - 55 °C to + 100 °C
4N35 CTR
DC
40 50 %
4N36 CTR
DC
40 50 %
4N37 CTR
DC
40 50 %
4N38 CTR
DC
30 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time
(1)
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
on
10 μs
Turn-off time
(1)
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100 Ω t
off
10 μs
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Channel I
Channel II
95 10804-3
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
F
0
50 Ω R
L
I
F
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
) Turn-off time
96 11698
P1-P3P4-P6P7-P7

4N35-X019T

Mfr. #:
Buy 4N35-X019T
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR>100%
Lifecycle:
New from this manufacturer.
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