www.vishay.com
2
Document Number 84746
Rev. 1.0, 07-Okt-05
VEMI65A6-FC2
Vishay Semiconductors
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter Test Conditions Synbol Min. Ty p. Max. Unit
Reverse Stand-Off Voltage Input to ground V
RWM
5 V
Line resistance between input and output R
S
90 100 110 Ω
Cut-off Frequency 3 dB - attenuation f
3dB
60 MHz
Attenuation f = 800 MHz - 2 GHz S
21
- 30 dB
Input current Input to ground at V
RWM
output not
connected
I
R
1µA
Max. clamping output voltage Output to ground V
in-ESD
= 8 kV V
C-Out
8V
Max. Peak pulse current each Input to ground
See Fig. 1
at I
PPM
5 A
Reverse Breakdown Voltage at I
R
= 1 mA each input or output to
ground
V
BR
6.5 V
Capacitance at V
R
= 0 V; f = 1 MHz
each input or output to ground
C
IN
90 pF
Figure 1. 8/20 µs Peak Pulse Current wave from IEC 61000-4-5
Figure 2. Typical Clamping Voltage vs. Peak Pulse Current I
PP
19465
0 %
20 %
40 %
60 %
80 %
100 %
0 10203040
Time in µs
PPM
µs to 100%
I
0
2
4
6
8
10
12
0123456
I
PP
in A
V
C
in V
Measured acc. IEC 61000-4-5 (8/20µs - Waveform)
C
OUTPUT to Ground
C
INPUT to Ground
19474
Figure 3. Typical Input Voltage V
IN
vs. Input Current I
IN
Figure 4. Typical small signal transmission (S21) at Z
0
= 50 Ohm
0
1
2
3
4
5
6
7
8
0.01 0.1 1 10 100 1000 10000
I
IN
in µA
V
IN
in V
Output not connected
19473
-40
-35
-30
-25
-20
-15
-10
-5
0
1 10 100 1000 10000
Frequency in MHz
Transmission (S21) in dB
Z
0
= 50
V
IN_
= 0V
V
IN_
= 5V
19475
Ω
