STD10PF06-1 Datasheet STD10PF06-1, STD10PF06T4 | P1-P3

1/9March 2002

.

STD10PF06

P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK

STripFET™ II POWER MOSFET

■ TYPICAL R

DS

(on) = 0.18 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ LOW GATE CHARGE

■ APPLICATION ORIENTED

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps therefore a remarkable manufacturing

reproducibility.

APPLICATIONS

■ MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

TYPE

V

DSS

R

DS(on)

I

D

STD10PF06 60 V < 0.20

Ω

10 A

3

2

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•)

Pulse width limited by safe operating area.

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

(1) I

SD

≤

10A, di/dt

≤

300A/µs, V

DD

≤

V

(BR)DSS

, T

j

≤

T

JMAX

Symbol Parameter Value Unit

V

DS

Drain-source Voltage (V

GS

= 0)

60 V

V

DGR

Drain-gate Voltage (R

GS

= 20 k

Ω

)

60 V

V

GS

Gate- source Voltage ± 20 V

I

D

Drain Current (continuous) at T

C

= 25°C

10 A

I

D

Drain Current (continuous) at T

C

= 100°C

7A

I

DM(

•)

Drain Current (pulsed) 40 A

P

tot

Total Dissipation at T

C

= 25°C

40 W

Derating Factor 0.27 W/°C

dv/dt

(1)

Peak Diode Recovery voltage slope 6 V/ns

T

stg

Storage Temperature -65 to 175 °C

T

j

Max. Operating Junction Temperature 175 °C

INTERNAL SCHEMATIC DIAGRAM

STD10PF06

2/9

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (T

CASE

= 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON

(*)

DYNAMIC

Rthj-case

Rthj-amb

T

l

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

3.75

100

275

°C/W

°C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T

j

max)

10 A

E

AS

Single Pulse Avalanche Energy

(starting T

j

= 25 °C, I

D

= I

AR

, V

DD

= 25 V)

125 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

Breakdown Voltage

I

D

= 250 µA, V

GS

= 0

60 V

I

DSS

Zero Gate Voltage

Drain Current (V

GS

= 0)

V

DS

= Max Rating

V

DS

= Max Rating T

C

= 125°C

1

10

µA

I

GSS

Gate-body Leakage

Current (V

DS

= 0)

V

GS

= ± 20V

±1 µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

I

D

= 250 µA

24V

R

DS(on)

Static Drain-source On

Resistance

V

GS

= 10 V I

D

= 5 A

0.18 0.20

Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(*)

Forward Transconductance

V

DS

= 25 V

I

D

=5 A

25 S

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V

DS

= 25 V f = 1 MHz V

GS

= 0

850

230

75

pF

3/9

STD10PF06

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)

Pulse width limited by safe operating area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Delay Time

Rise Time

V

DD

= 30 V I

D

= 5 A

R

G

= 4.7

Ω

V

GS

= 10 V

(Resistive Load, Figure 3)

20

40

ns

Q

g

Q

gs

Q

gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

DD

= 48 V I

D

= 10 A V

GS

= 10 V

16

4

6

21 nC

nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time

Fall Time

V

DD

= 30 V I

D

= 5 A

R

G

= 4.7

Ω,

V

GS

= 10 V

(Resistive Load, Figure 3)

40

10

ns

t

r(Voff)

t

f

t

c

Off-voltage Rise Time

Fall Time

Cross-over Time

V

clamp

= 48 V I

D

= 10 A

R

G

= 4.7

Ω,

V

GS

= 10 V

(Inductive Load, Figure 5)

10

17

30

ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(

•

)

Source-drain Current

Source-drain Current (pulsed)

10

40

A

V

SD

(*)

Forward On Voltage

I

SD

= 10 A V

GS

= 0

2.5 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

I

SD

= 10 A di/dt = 100A/µs

V

DD

= 30 V T

j

= 150°C

(see test circuit, Figure 5)

100

260

5.2

ns

µ

C

A

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

Thermal Impedance

STD10PF06-1

STD10PF06-1

Products related to this Datasheet