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MTP23P06VG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1 Publication Order Number:
MTP23P06V/D
MTP23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Pb−Free Package is Available*
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 10 ms)
V
GS
V
GSM
± 15
± 25
Vdc
Vpk
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
23
15
81
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
P
D
90
0.60
W
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to 175 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 23 Apk, L = 3.0 mH, R
G
= 25 W)
E
AS
794 mJ
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
R
q
JC
R
q
JA
1.67
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
S
G
P−Channel
23 AMPERES, 60 VOLTS
R
DS(on)
= 120 mW
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MTP23P06V TO−220AB 50 Units/Rail
http://onsemi.com
MTP23P06VG TO−220AB
(Pb−Free)
50 Units/Rail
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAM
AND PIN ASSIGNMENT
MTP23P06V = Device Code
A = Location Code
Y = Year
WW = Work Week
G = Pb−Free Package
MTP
23P06VG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
MTP23P06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
−
60.5
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
10
100
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − 100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
−
2.8
5.3
4.0
−
Vdc
mV/°C
Static Drain−Source On−Resistance (V
GS
= 10 Vdc, I
D
= 11.5 Adc) R
DS(on)
− 0.093 0.12
W
Drain−Source On−Voltage
(V
GS
= 10 Vdc, I
D
= 23 Adc)
(V
GS
= 10 Vdc, I
D
= 11.5 Adc, T
J
= 150°C)
V
DS(on)
−
−
−
−
3.3
3.2
Vdc
Forward Transconductance
(V
DS
= 10.9 Vdc, I
D
= 11.5 Adc)
g
FS
5.0 11.5 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
C
iss
− 1160 1620 pF
Output Capacitance C
oss
− 380 530
Transfer Capacitance C
rss
− 105 210
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 23 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 W)
t
d(on)
− 13.8 30 ns
Rise Time t
r
− 98.3 200
Turn−Off Delay Time t
d(off)
− 41 80
Fall Time t
f
− 62 120
Gate Charge (See Figure 8)
(V
DS
= 48 Vdc, I
D
= 23 Adc, V
GS
= 10 Vdc)
Q
T
− 38 50 nC
Q
1
− 7.0 −
Q
2
− 18 −
Q
3
− 14 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 23 Adc, V
GS
= 0 Vdc)
(I
S
= 23 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
2.2
1.8
3.5
−
Vdc
Reverse Recovery Time
(I
S
= 23 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
− 142.2 −
ns
t
a
− 100.5 −
t
b
− 41.7 −
Reverse Recovery Stored Charge Q
RR
− 0.804 −
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
L
D
− 3.5
4.5
−
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
− 7.5 − nH
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
MTP23P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
02 4 6 810
0
10
20
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
30
35
23 4 8
0
5
10
15
40
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 5 10 15 20 25
0.14
0.02
0.04
0.06
0.12
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (OHMS)
0 5 10 15 20 30
0.08
0.085
0.09
0.095
0.11
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−50
0
0.2
0.4
0.6
1.8
010203040
1
50
10
100
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
T
J
= 125°C
15 V
−25 0 25 50 75 100 150
T
J
= 25°C V
DS
≥ 10 V
T
J
= −55°C
25°C
100°C
T
J
= 100°C
25°C
−55°C
T
J
= 25°C
V
GS
= 0 V
V
GS
= 10V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 11.5 A
40
50
7 V
6 V
5 V
4 V
8 V
9 V
20
25
567
0.08
0.1
30
0.1
0.105
25
0.8
1
1.2
1.4
1.6
125
60
0.16
35 40 45 35 40 45 50
0.115
0.12
175
P1-P3P4-P6P7-P7

MTP23P06VG

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Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 23A P-Channel
Lifecycle:
New from this manufacturer.
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