IRFL014NTRPBF

P1-P3 P4-P6 P7-P8

IRFL014NPbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

50

100

150

200

250

300

350

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0246810

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

I = 1.7A

V = 44V

V = 28V

V = 11V

FOR TEST CIRCUIT

SEE FIGURE 9

D

DS

DS

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.

4

T = 25°C

T = 150°C

J

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

0.1

1

10

100

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

100µs

1ms

10ms

A

T = 25°C

T = 150°C

Single Pulse

A

J

IRFL014NPbF

www.irf.com 5

+

-

V

DS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

10V

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

D

S

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

V

DS

9

0%

1

0%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t , Rectangular Pulse Duration (sec)

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

thJA

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

J

DM

thJA

A

IRFL014NPbF

6 www.irf.com

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

0

20

40

60

80

100

120

25 50 75 100 125 15

0

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

I

TOP 1.5A

2.7A

BOTTOM 3.4A

DD

D

P1-P3 P4-P6 P7-P8

IRFL014NTRPBF

Mfr. #:

Buy IRFL014NTRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 55V 1.9A 160mOhm 7nC

Lifecycle:

New from this manufacturer.

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