IRK.41, .56 Series
3
Bulletin I27131 rev. G 10/02
www.irf.com
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
T
stg
Storage temp. range - 40 to 125
R
thJC
Max. internal thermal
resistance, junction 0.23 0.20 Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5) gate open circuit
15 mA T
J
= 125
o
C, gate open circuit
500 V/µs
Blocking
V
INS
RMS isolation voltage V
Triggering
P
GM
Max. peak gate power 10 10
P
G(AV)
Max. average gate power 2.5 2.5
I
GM
Max. peak gate current 2.5 2.5 A
-V
GM
Max. peak negative
gate voltage
4.0 T
J
= - 40°C
2.5 T
J
= 25°C
1.7 T
J
= 125°C
270 T
J
= - 40°C
150 mA T
J
= 25°C
80 T
J
= 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters IRK.41 IRK.56 Units Conditions
0.25 V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Parameters IRK.41 IRK.56 Units Conditions
Sine half wave conduction Rect. wave conduction
Devices Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)