FFSD1065A

© Semiconductor Components Industries, LLC, 2017
January, 2018 Rev. 1
1 Publication Order Number:
FFSD1065A/D
FFSD1065A
Silicon Carbide Schottky
Diode
650 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175 °C
Avalanche Rated 64 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
DPAK
(TO252)
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
$Y&Z&3&K
FFS
D1065A
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
FFSD1065A = Specific Device Code
3
2
1
1,3 Cathode 2. Anode
FFSD1065A
www.onsemi.com
2
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Rating Parameter FFSD1065A Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 64 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 158°C 10
A
Continuous Rectified Forward Current @ T
C
< 135°C 18
I
F,MAX
NonRepetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
760
A
T
C
= 150°C, 10 ms
740 A
I
F,SM
NonRepetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 56 A
I
F,RM
Repetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 34 A
Ptot Power Dissipation
T
C
= 25°C 150 W
T
C
= 150°C 25 W
T
J
. T
STG
Operating and Storage Temperature Range 55 to + 175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max. 1.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
V
F
Forward Voltage
I
F
= 10 A, T
C
= 25°C 1.50 1.75
V
I
F
= 10 A, T
C
= 125°C 1.6 2.0
I
F
= 10 A, T
C
= 175°C 1.72 2.4
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C 200 mA
V
R
= 650 V, T
C
= 125°C 400
V
R
= 650 V, T
C
= 175°C 600
Q
C
Total Capacitive Charge V = 400 V 34 nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz 575
pF
V
R
= 200 V, f = 100 kHz 62
V
R
= 400 V, f = 100 kHz 47
1. E
AS
of 64 mJ is based on starting T
J
= 25°C; L = 0.5 mH, I
AS
= 16 A, V = 50 V.
ORDERING INFORMATION
Device Marking Package Reel Size Tape Width Quantity
FFSD1065A FFSD1065A DPAK 13 N/A 2500
FFSD1065A
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
0.0 0.5 1.0 1.5 2.0
0
2
4
6
8
10
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= 55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
200 300 400 500 600 650
10
9
10
8
10
7
10
6
10
5
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 55
o
C
T
J
= 25
o
C
T
J
= 75
o
C
25 50 75 100 125 150 175
0
30
60
90
120
150
180
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175
0
40
80
120
160
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
0
10
20
30
40
50
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
0.1 1 10 100 650
10
100
1000
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
6500 100 200 300 400 500 600

FFSD1065A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 10A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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