FFSD1065A
www.onsemi.com
2
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Rating Parameter FFSD1065A Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 64 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 158°C 10
A
Continuous Rectified Forward Current @ T
C
< 135°C 18
I
F,MAX
Non−Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
760
A
T
C
= 150°C, 10 ms
740 A
I
F,SM
Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 56 A
I
F,RM
Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 34 A
Ptot Power Dissipation
T
C
= 25°C 150 W
T
C
= 150°C 25 W
T
J
. T
STG
Operating and Storage Temperature Range −55 to + 175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max. 1.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
V
F
Forward Voltage
I
F
= 10 A, T
C
= 25°C − 1.50 1.75
V
I
F
= 10 A, T
C
= 125°C − 1.6 2.0
I
F
= 10 A, T
C
= 175°C − 1.72 2.4
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C − − 200 mA
V
R
= 650 V, T
C
= 125°C − − 400
V
R
= 650 V, T
C
= 175°C − − 600
Q
C
Total Capacitive Charge V = 400 V − 34 − nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz − 575 −
pF
V
R
= 200 V, f = 100 kHz − 62 −
V
R
= 400 V, f = 100 kHz − 47 −
1. E
AS
of 64 mJ is based on starting T
J
= 25°C; L = 0.5 mH, I
AS
= 16 A, V = 50 V.
ORDERING INFORMATION
Device Marking Package Reel Size Tape Width Quantity
FFSD1065A FFSD1065A D−PAK 13″ N/A 2500