IGP50N60T
TrenchStop Series IGW50N60T
Power Semiconductors
6 Rev. 2.6 Nov. 09
t, SWITCHING TIMES
0A 20A 40A 60A 80A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t, SWITCHING TIMES
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V, R
G
= 7,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 50A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
GE(th),
GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
, JUNCTION TEMPERATURE T
J
, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, I
C
= 50A, R
G
=7,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I
C
= 0.8mA)