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NTLUS4C12NTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 1
1 Publication Order Number:
NTLUS4C12N/D
NTLUS4C12N
Power MOSFET
30 V, 10.7 A, Single N−Channel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with
Exposed Drain Pads for Excellent Thermal Conduction
• Ultra Low R
DS(on)
to Reduce Conduction Losses
• Optimized Gate Charge to Reduce Switching Losses
• Low Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
• Synch DC−DC Converters
• Wireless Charging Circuit
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
10.7
A
T
A
= 85°C 7.7
t ≤ 5 s T
A
= 25°C 15.1
Power Dissipa-
tion (Note 1)
Steady
State
T
A
= 25°C
P
D
1.54
W
t ≤ 5 s T
A
= 25°C 3.1
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
6.8
A
T
A
= 85°C 4.9
Power Dissipation (Note 2) T
A
= 25°C P
D
0.63 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
43 A
MOSFET Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 1) I
S
1.55 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
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N−CHANNEL MOSFET
30 V
12 mW @ 4.5 V
9 mW @ 10 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
MOSFET
UDFN6
(mCOOL])
CASE 517BG
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AG = Specific Device Code
M = Date Code
G = Pb−Free Package
AGMG
G
1
MARKING DIAGRAM
(Top View)
(Note: Microdot may be in either location)
10.7 A
D
S
G
PIN CONNECTIONS
Pin 1
D
S
1
2
3
6
5
4
D
D
S
D
D
G
D
S
19 mW @ 3.3 V
15 mW @ 3.7 V
NTLUS4C12N
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2
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
R
θJA
81
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
θJA
40.5
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
200
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, ref to 25°C
12 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.3 2.1 V
Negative Threshold Temp. Coefficient V
GS(TH)
/T
J
4.8 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 9.0 A 7.2 9
mW
V
GS
= 4.5 V, I
D
= 8.0 A 9.3 12
V
GS
= 3.7 V, I
D
= 5.0 A 10.9 15
V
GS
= 3.3 V, I
D
= 5.0 A 13 19
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 9.0 A 39 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 15 V
1172
pF
Output Capacitance C
OSS
546
Reverse Transfer Capacitance C
RSS
26
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V;
I
D
= 8.0 A
8.4
nC
Threshold Gate Charge Q
G(TH)
1.1
Gate-to-Source Charge Q
GS
3.0
Gate-to-Drain Charge Q
GD
2.2
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V;
I
D
= 9.0 A
18 nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 8.0 A, R
G
= 3 W
9.4
ns
Rise Time t
r
15
Turn-Off Delay Time t
d(OFF)
14
Fall Time t
f
3.5
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 9.0 A, R
G
= 3 W
6.3
ns
Rise Time t
r
14
Turn-Off Delay Time t
d(OFF)
18
Fall Time t
f
2.4
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLUS4C12N
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitsMaxTypMinTest ConditionSymbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 1.5 A
T
J
= 25°C 0.72 1.1
V
T
J
= 125°C 0.52
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 1.5 A
29
ns
Charge Time t
a
14.1
Discharge Time t
b
14.9
Reverse Recovery Charge Q
RR
20 nC
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1.0 3.02.52.01.50.50
0
5
10
15
20
25
3.02.52.01.51.0
0
5
10
15
20
25
30
35
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
109876543
7
9
11
13
15
17
19
21
87654321
5
7
9
11
13
15
17
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
3.2 − 10 V
T
J
= 25°C
V
GS
= 2.8 V
2.6 V
2.4 V
2.2 V
3.0 V
2.0 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
DS
= 5 V
T
J
= 25°C
I
D
= 9 A
T
J
= 25°C
V
GS
= 3.3 V
9
V
GS
= 3.7 V
V
GS
= 4.5 V
V
GS
= 10 V
P1-P3P4-P6

NTLUS4C12NTAG

Mfr. #:
Buy NTLUS4C12NTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET COMP UDFN6 30V 10.7A 9MOH
Lifecycle:
New from this manufacturer.
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